Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Christian Schleich"'
Autor:
Maximilian W. Feil, Andreas Huerner, Katja Puschkarsky, Christian Schleich, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger, Tibor Grasser
Publikováno v:
Crystals, Vol 10, Iss 12, p 1143 (2020)
Silicon carbide is an emerging material in the field of wide band gap semiconductor devices. Due to its high critical breakdown field and high thermal conductance, silicon carbide MOSFET devices are predestined for high-power applications. The concen
Externí odkaz:
https://doaj.org/article/bbd5655d89664d53bf82cabcad661c74
Autor:
Michael Waltl, Christian Schleich, Aleksandr Vasilev, Dominic Waldhoer, Bernhard Stampfer, Tibor Grasser
Publikováno v:
Materials Science Forum. 1090:185-191
In the recent past, lots of efforts have been put into further developing SiC power MOSFETs. In addition to optimization of device geometry, i.e., vertical device structure, various post-oxidation anneals have been studied to improve carrier mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69dbc1130dd83fd9a14976bca0d81672
https://doi.org/10.4028/p-o083cb
https://doi.org/10.4028/p-o083cb
Autor:
Christian Schleich, Dominic Waldhor, Al-Moatasem El-Sayed, Konstantinos Tselios, Ben Kaczer, Tibor Grasser, Michael Waltl
Publikováno v:
IEEE Transactions on Electron Devices. 69:4486-4493
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47b014d4ded5786fa1be8847898143ee
https://doi.org/10.1109/ted.2022.3185965
https://doi.org/10.1109/ted.2022.3185965
Autor:
Alexander Vasilev, Markus Jech, Alexander Grill, Gerhard Rzepa, Christian Schleich, Stanislav Tyaginov, Alexander Makarov, Gregor Pobegen, Tibor Grasser, Michael Waltl
Publikováno v:
IEEE Transactions on Electron Devices. 69:3290-3295
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9ecef773b3d043274bf58051ebe9c84
https://doi.org/10.1109/ted.2022.3166123
https://doi.org/10.1109/ted.2022.3166123
Publikováno v:
Oxide-based Materials and Devices XIV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03dc6c3e9d5f50630db75e5534719769
https://doi.org/10.1117/12.2659249
https://doi.org/10.1117/12.2659249
Autor:
Michael Waltl, Yoanlys Hernandez, Christian Schleich, Katja Waschneck, Bernhard Stampfer, Hans Reisinger, Tibor Grasser
Publikováno v:
Materials Science Forum. 1062:688-695
For the analysis of the characteristics and behavior of circuits prior to fabrication and to improve circuit performance, simulations using Spice tools are typically performed. Such tools rely on static compact models describing the behavior of the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d68b1c6038bbcc1e27fea2941213465
https://doi.org/10.4028/p-pijkeu
https://doi.org/10.4028/p-pijkeu
Autor:
Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Christian Schleich, Aleksandr Vasilev, Dominic Waldhör, Michael Waltl, Wolfgang Gustin, Tibor Grasser
Publikováno v:
Communications Engineering. 2
Wide-bandgap semiconductors such as silicon carbide, gallium nitride, and diamond are inherently suitable for high power electronics for example in renewable energy applications and electric vehicles. Despite the high interest, the theoretical limit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8147d01d0225ba0b2dc9c5a01383741
https://doi.org/10.1038/s44172-023-00053-8
https://doi.org/10.1038/s44172-023-00053-8
Autor:
Eleftherios G. Ioannidis, Konstantinos Tselios, Tibor Grasser, Christian Schleich, Bernhard Stampfer, Michael Waltl, Hubert Enichlmair, J. Michl, Dominic Waldhoer
Publikováno v:
IEEE Transactions on Electron Devices. 68:4057-4063
Defects in the gate oxide give rise to bias temperature instability (BTI), which is considered a serious threat to the device reliability of ultrascaled MOSFETs. Extrapolating the device degradation over the operational lifetime, therefore, requires
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5fe6c9b81d096985c94ebe05a75b1f7
https://doi.org/10.1109/ted.2021.3091966
https://doi.org/10.1109/ted.2021.3091966
Autor:
Maximilian W. Feil, Hans Reisinger, Dominic Waldhoer, Michael Waltl, Tibor Grasser, Katja Waschneck, Christian Schleich
Publikováno v:
IEEE Transactions on Electron Devices. 68:4016-4021
Silicon carbide (SiC) MOSFETs still exhibit higher drifts of the threshold voltage than comparable silicon devices due to charge trapping, especially regarding small time scales. Understanding this behavior and the consequences in application relevan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64c9723bdf63fe9c2201f0907b828e7c
https://doi.org/10.1109/ted.2021.3092295
https://doi.org/10.1109/ted.2021.3092295
Autor:
Mario Lanza, Theresia Knobloch, Michael Waltl, Yury Yu. Illarionov, Takashi Taniguchi, Kenji Watanabe, Fabian Ducry, Tibor Grasser, Christian Schleich, Mathieu Luisier, Mikhail I. Vexler, Stefan Wachter, Thomas Mueller
Publikováno v:
Nature Electronics
Complementary metal–oxide–semiconductor (CMOS) logic circuits at their ultimate scaling limits place extreme demands on the properties of all materials involved. The requirements for semiconductors are well explored and could possibly be satisfie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52553fbc4f239489bc5183383d5bfb1e
https://doi.org/10.1038/s41928-020-00529-x
https://doi.org/10.1038/s41928-020-00529-x