Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Christian Samundsett"'
Autor:
James Bullock, Hiroki Ota, Hanchen Wang, Zhaoran Xu, Mark Hettick, Di Yan, Christian Samundsett, Yimao Wan, Stephanie Essig, Monica Morales-Masis, Andrés Cuevas, Ali Javey
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract There is tremendous interest in reducing losses caused by the metal contacts in silicon photovoltaics, particularly the optical and resistive losses of the front metal grid. One commonly sought-after goal is the creation of high aspect-ratio
Externí odkaz:
https://doaj.org/article/add42f5a807642098a1bf72b773343db
Autor:
Jiali Wang, Sieu Pheng Phang, Christian Samundsett, Zhuofeng Li, Thien N. Truong, Jie Yang, Zhao Wang, Peiting Zheng, Xinyu Zhang, Hieu T. Nguyen, Daniel Macdonald, Josua Stuckelberger
Publikováno v:
ACS Applied Nano Materials. 6:140-147
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8e91596d8abd579c45e591ea83fd64c
https://doi.org/10.1021/acsanm.2c04148
https://doi.org/10.1021/acsanm.2c04148
Autor:
Anh Huy Tuan Le, Ruy S. Bonilla, Lachlan E. Black, Johannes P. Seif, Thomas G. Allen, Robert Dumbrell, Christian Samundsett, Ziv Hameiri
Publikováno v:
Solar RRL.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::362455f504aa0a54207cea3eb45da9fd
https://doi.org/10.1002/solr.202201050
https://doi.org/10.1002/solr.202201050
Autor:
Wenjie Wang, Wenhao Chen, Siva Krishna Karuturi, Zhengping Li, Jian He, Di Yan, Wenzhong Shen, Yimao Wan, Christian Samundsett, Sieu Pheng Phang
Publikováno v:
Solar Energy. 231:203-208
Crystalline silicon (c-Si) solar cells using interdigitated back contact (IBC) configurations are one of the most promising candidates to reach the practical efficiency limits of c-Si solar cells. However, the complexity of the process flow hinders t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::583243f9fa02c9dab378f01726269d6b
https://doi.org/10.1016/j.solener.2021.11.044
https://doi.org/10.1016/j.solener.2021.11.044
Autor:
Astha Sharma, The Duong, Peng Liu, Joshua Zheyan Soo, Di Yan, Doudou Zhang, Asim Riaz, Christian Samundsett, Heping Shen, Cheng Yang, Siva Krishna Karuturi, Kylie Catchpole, Fiona J. Beck
Publikováno v:
Sustainable Energy & Fuels. 6:349-360
Si photocathode with industrially relevant charge selective passivation and physically deposited earth-abundant catalyst is developed with an efficiency above 10%. Solar-to-hydrogen efficiency of 17% is achieved by combining perovskite PV in tandem.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::650cf7f7e9cbb1fb031992273187dff3
https://doi.org/10.1039/d1se01260f
https://doi.org/10.1039/d1se01260f
Autor:
Christian Samundsett, Di Yan, Wenhao Chen, Wenjie Wang, Sieu Pheng Phang, Andres Cuevas, Di Kang, Daniel Macdonald, Yimao Wan, Josua Stuckelberger, Lang Zhou
Publikováno v:
IEEE Journal of Photovoltaics. 10:1239-1245
Passivating contacts for silicon solar cells can be fabricated by depositing a layer of intrinsic amorphous silicon (a-Si) by the plasma-enhanced chemical vapor deposition (PECVD) onto an oxidized silicon wafer, followed by a thermal POCl3 diffusion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb6793a45f3c2f8e29ef9e8c222ac6ac
https://doi.org/10.1109/jphotov.2020.3001166
https://doi.org/10.1109/jphotov.2020.3001166
Autor:
Jichun Ye, Daniel Macdonald, Di Yan, Jing Yu, Christian Samundsett, Xi Yang, Yimao Wan, Guru P. Neupan, Pheng Phang, Rabin Basnet
Publikováno v:
ACS Applied Materials & Interfaces. 12:26177-26183
Efficient and stable electron selective materials compatible with commercial production are essential to the fabrication of dopant-free silicon solar cells. In this work, we report an air-stable TiN (titanium nitride) polycrystalline film, deposited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2463c6f4fc469b837fbcee2a5d3e635b
https://doi.org/10.1021/acsami.0c04439
https://doi.org/10.1021/acsami.0c04439
Autor:
Daniel Macdonald, Hang Cheong Sio, Josua Stuckelberger, Di Kang, Rong Liu, Christian Samundsett
Publikováno v:
ACS applied materialsinterfaces. 13(27)
Defects and impurities in silicon limit carrier lifetimes and the performance of solar cells. This work explores the use of fluorine to passivate defects in silicon for solar cell applications. We present a simple method to incorporate fluorine atoms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83920d61a694f283417d812f8e66fd86
https://pubmed.ncbi.nlm.nih.gov/34191501
https://pubmed.ncbi.nlm.nih.gov/34191501
Autor:
Matthew Young, Andres Cuevas, Mowafak Al-Jassim, Thien N. Truong, AnYao Liu, Felipe Kremer, Christian Samundsett, Zetao Ding, Hieu T. Nguyen, Daniel Macdonald, Di Yan, Mike Tebyetekerwa, Steven P. Harvey
Publikováno v:
ACS Applied Energy Materials. 2:8783-8791
Hydrogen-assisted defect engineering, via a hydrogenated silicon nitride (SiNx:H) capping layer, on doped polycrystalline silicon (poly-Si) passivating-contact structures, is explored using complem...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0cf8cbf85eefd9b33b3de853718c5f7
https://doi.org/10.1021/acsaem.9b01771
https://doi.org/10.1021/acsaem.9b01771
Autor:
Issam Gereige, Qunyu Bi, Ahmed Al-Saggaf, Xinbo Yang, Yimao Wan, Jun Peng, Thomas Allen, Hoang X. Dang, Andres Cuevas, Stefaan De Wolf, Lujia Xu, Christian Samundsett, Hang Xu, Wenzhu Liu, Esra Alhabshi, Jingxuan Kang, Michele De Bastiani, Konstantinos Kotsovos, Erkan Aydin
Publikováno v:
Joule. 3:1314-1327
Summary High-performance passivating contact is a prerequisite for high-efficiency crystalline silicon (c-Si) solar cells. In this work, an electron-conductive, hole-blocking contact based on titanium nitride (TiN) deposited by reactive magnetron spu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::282f4d646d0592a5558909eac1e6eda8
https://doi.org/10.1016/j.joule.2019.03.008
https://doi.org/10.1016/j.joule.2019.03.008