Výsledky vyhledávání - "Christian Roemer"

Akademický článek

High‐Frequency fT and fmax in Organic Transistors: Performance and Perspective

Autor: Ghader Darbandy, Elahe Rastegar Pashaki, Christian Roemer, Amric Bonil, Juan Wang, Benjamin Iniguez, Hans Kleemann, Alexander Kloes

Publikováno v: Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)

Abstract In state‐of‐the‐art organic transistors, the transit frequency fT is reported to be fT = 40 MHz for vertical organic transistors, where a voltage‐normalized fT corresponds to 0.36 MHz V−2. The reported highest fT for conventional o

Externí odkaz: https://doaj.org/article/54523743cb2c49058cd59d3382e4f246

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Akademický článek

Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors

Autor: Christian Roemer, Ghader Darbandy, Mike Schwarz, Jens Trommer, Andre Heinzig, Thomas Mikolajick, Walter M. Weber, Benjamin Iniguez, Alexander Kloes

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 10, Pp 416-423 (2022)

A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injec

Externí odkaz: https://doaj.org/article/e7a6752fe9fb43a7b35b54c1a5d279c7

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Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors

Autor: Christian Roemer, Ghader Darbandy, Mike Schwarz, Jens Trommer, Maik Simon, Andre Heinzig, Thomas Mikolajick, Walter M. Weber, Benjamin Iniguez, Alexander Kloes

Publikováno v: 2022 29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::949da80f404b890c16e0048693ae712f
https://doi.org/10.23919/mixdes55591.2022.9838216

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Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors

Autor: Benjamin Iniguez, Alexander Kloes, Andre Heinzig, Jens Trommer, Christian Roemer, Walter M. Weber, Ghader Darbandy, Thomas Mikolajick, Mike Schwarz

Publikováno v: 2021 IEEE Latin America Electron Devices Conference (LAEDC).

This paper presents a closed-form, physics-based compact model which is used to calculate the DC characteristics of double gate Schottky barrier field-effect transistors (SBFETs) and reconfigurable field-effect transistors (RFETs). Therefore, the mod

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9e6ff57088ead3b26d35712728173190
https://doi.org/10.1109/laedc51812.2021.9437954

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Unraveling Structure and Device Operation of Organic Permeable Base Transistors

Autor: Stefan Resch, René Hübner, Alexander Kloes, Christian Roemer, Petr Formanek, Felix Dollinger, Karl Leo, Axel Fischer, Hans Kleemann, Ghader Darbandy

Publikováno v: Advanced Electronic Materials 6(2020)7, 2000230

Organic permeable base transistors (OPBTs) are of great interest for flexible electronic circuits, as they offer very large on-current density and a record-high transition frequency. They rely on a vertical device architecture with current transport

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0ecb04b9bb170b0e3ee06f52612fefc
https://www.hzdr.de/publications/Publ-31338-1

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Characterization of the Charge-Trap Dynamics in Organic Thin-Film Transistors

Autor: Alexander Kloes, Christian Roemer, Jakob Pruefer, Hagen Klauk, Ghader Darbandy, James W. Borchert, Jakob Leise

Publikováno v: MIXDES

Step and pulse response transient measurements are performed in organic TFTs to study the charge trapping, detrapping dynamics and DC gate/drain bias stress effects on device characteristics. A strong correlation has been demonstrated between the dev

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b9ecdb1d52919a60f658acb142d69b95
https://doi.org/10.23919/mixdes.2019.8787105

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Introduction to a new wide area sar mode using the F-SCAN principle

Autor: Christian Roemer

Publikováno v: IGARSS

High Resolution Wide Swath Imaging (HRWS) with spaceborne SAR systems has received major attention over the recent years [1]-[6]. The favored concepts embark on multiple phase centers distributed in both azimuth and elevation direction using Digital

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c94b57a12bc808c75a8711694b0d45c0
https://doi.org/10.1109/igarss.2017.8127840

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