Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Christian R. Musil"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :428-432
Focused ion beam (FIB) milling has been applied to improve and tailor the emission characteristics of Fabry-Perot type semiconductor lasers. Multi-mode commercial lasers operating at 780 nm were modified by sputtering 1 μ m × 1 μ m depressions int
Publikováno v:
Journal of Applied Physics. 80:3727-3733
The dependence of the retained lattice damage upon dose rate was investigated by focused ion beam (FIB) implantation of 210 keV Si++ into GaAs at room temperature. The as‐implanted and postannealed states were characterized by ion channeling and Ha
Autor:
H.M. Cronson, J.F. Devine, A. Chu, Henri J. Lezec, S. Soares, Christian R. Musil, M.N. Soloman
Publikováno v:
Conference Record AUTOTESTCON '92: The IEEE Systems Readiness Technology Conference.
The authors describe a vision of unambiguous fault isolation on RF equipment and enabling critical technologies. The overall goal is reduction of logistic support and maintenance cost of RF subsystems. Savings will be achieved through reduced false a
Publikováno v:
SPIE Proceedings.
The repair of an opaque defect by focused ion beam milling is compromised by non-idealities of the repair process, which include an error in the placement of the repaired edge, over-etching and implantation of gallium into the quartz substrate, and t
Autor:
S. Etchin, D. Vignaud, John Melngailis, Dimitri A. Antoniadis, K. S. Liao, Christian R. Musil
Publikováno v:
Applied Physics Letters. 60:2267-2269
The lateral distribution of focused‐ion‐beam implanted Be atoms in GaAs has been studied by measuring the electrical resistivity in grating structures. The gratings were implanted at 230 and 260 keV with periods from 0.04 to 3 μm oriented both p
Publikováno v:
SPIE Proceedings.
We present the results of a DARPA sponsored study on the application of Focused Ion Beam (FIB) systems to metrology in advanced lithography for production and process development. Data on top-down measurements, on the effects of FIB imaging, and on m
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:2781
The fundamental characteristic of nanotechnology is the fabrication of structures with molecular dimensions. In connection with a novel immunosensor, a specifically tailored molecular environment is required which combines immobilized biochemical rec
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:581
The lateral distribution of focused‐ion‐beam implanted Si and Be atoms has been studied by measuring the electrical resistivity in grating structures. The gratings which were oriented perpendicular to the direction of the current flow were implan
Autor:
Christian R. Musil, John Melngailis, M. I. Shepard, Dimitri A. Antoniadis, Henri J. Lezec, James E. Murguia
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1374
Combining optical lithography and focused ion beam (FIB) patterning in direct‐write device and circuit fabrication by generating large features optically and small features with the FIB can significantly reduce beam writing time. Our approach to FI
Autor:
Hans W. Lehmann, Celestino Padeste, Christian R. Musil, Sebastian Kossek, Jens Gobrecht, Louis Tiefenauer
Publikováno v:
Scopus-Elsevier
A process to structure gold electrodes with nanometer-sized dimensions for biosensor applications has been developed. Latex spheres (60 nm diam) are used as a masking material during the evaporation of a gold film onto a Si/SiO 2 substrate. Openings
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