Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Christian Prommesberger"'
Autor:
Robert Damian Lawrowski, Christian Prommesberger, Christoph Langer, Florian Dams, Rupert Schreiner
Publikováno v:
Advances in Materials Science and Engineering, Vol 2014 (2014)
The homogeneity of emitters is very important for the performance of field emission (FE) devices. Reactive-ion etching (RIE) and oxidation have significant influences on the geometry of silicon tips. The RIE influences mainly the anisotropy of the em
Externí odkaz:
https://doaj.org/article/d6d5ed529d624528abbd2b52045e1c83
Autor:
Christoph Langer, Rupert Schreiner, Felix Düsberg, R. Lawrowski, Michael Bachmann, Andreas Pahlke, Martin R. Hofmann, Christian Prommesberger
Publikováno v:
IEEE Transactions on Electron Devices. 64:5128-5133
We report on a method to stabilize the transmitted electronflux in a field-emission electronsource using an external regulation circuit. The electron source was realized with an array of silicon (Si) nanowhiskers on the top of elongated pillar struct
Autor:
D. Lutzenkirchen-Heicht, Pavel Serbun, Christian Prommesberger, Christoph Langer, Rupert Schreiner, G. Müller, V. Porshyn, R. Lawrowski
Publikováno v:
2018 31st International Vacuum Nanoelectronics Conference (IVNC).
We have investigated the properties of single n- and p-type black silicon (b-Si) pillars with a height of 20 μ m under strong electric field and halogen lamp or laser illumination. For both type of b-Si pillar structures, I-V measurements revealed s
Autor:
Christian Prommesberger, Pavel Serbun, Christoph Langer, V. Porshyn, Rupert Schreiner, R. Lawrowski, Dirk Lützenkirchen-Hecht
Publikováno v:
2018 31st International Vacuum Nanoelectronics Conference (IVNC).
Photosensitivity of single lightly p-doped, highly p-doped, with an integrated p/n junction and intrinsic high-aspect-ratio (HAR) silicon tips was investigated in an ultra-high vacuum environment. The current-voltage characteristics (I-V) of the ligh
Autor:
Matthias Lindner, Christoph Langer, Dominik Berndt, Christian Prommesberger, Rupert Schreiner
Publikováno v:
2018 31st International Vacuum Nanoelectronics Conference (IVNC).
Spatially confined non-equilibrium plasmas at vacuum and atmospheric pressure in the dimensions from a few microns to one millimeter are a promising approach to the generation and maintenance of stable glow discharges. The realization of these micro-
Autor:
R. Lawrowski, Felix Düsberg, Matthias Hausladen, Andreas Pahlke, Michael Bachmann, Christoph Langer, Christian Prommesberger, Rupert Schreiner, Mikhail Shamonin
Publikováno v:
2018 31st International Vacuum Nanoelectronics Conference (IVNC).
We investigated two different field emitter arrays consisting of 10 \times10 p-type and 10 \times 10 undoped Au-coated high aspect ratio silicon tips. The I-V characterization of the p-type sample showed a pronounced saturation for voltages higher th
Publikováno v:
2017 30th International Vacuum Nanoelectronics Conference (IVNC).
The three-dimensional epitaxial technique allows the realization of gallium nitride lines in addition to the rods. To optimize the properties of GaN-based field emission cathodes further investigations and an improvement of the epitaxial process were
Autor:
Felix Düsberg, R. Lawrowski, Florian Dams, Martin R. Hofmann, Christoph Langer, Christian Prommesberger, Rupert Schreiner, Michael Baclimann, Andreas Pahlke
Publikováno v:
2017 30th International Vacuum Nanoelectronics Conference (IVNC).
A control circuit to stabilize the flux of electrons transmitted through an extractor electrode is presented. By controlling the emission current a fluctuation with a standard deviation of 0.015% is observed. However, the achievable stability of the
Publikováno v:
2017 30th International Vacuum Nanoelectronics Conference (IVNC).
We report on the transition from field electron emission to plasma discharges. During an experiment with a miniaturized field emission electron source a plasma discharge accompanied by a luminous effect was observed. A novel graphical evaluation meth
Autor:
Pavel Serbun, Rupert Schreiner, Alexander N. Obraztsov, Christian Prommesberger, Anton S. Orekhov, Christoph Langer, Dirk Lützenkirchen-Hecht, Victor I. Kleshch
Publikováno v:
2017 30th International Vacuum Nanoelectronics Conference (IVNC).
An array of conical-shaped p-type silicon tips was fabricated by using reactive ion etching and sharpening oxidation. The apex of each tip was decorated by a tungsten hemispherical nanoparticle. Field emission properties of the tips were measured by