Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Christian Kranert"'
Autor:
Sebastian Gruner, Christian Kranert, Thomas Jauß, Tina Sorgenfrei, Christian Reimann, Jochen Friedrich
Publikováno v:
Crystals, Vol 12, Iss 11, p 1575 (2022)
Herein, facets and related phenomena are studied for silicon crystals grown in the and directions, using the Zone Melting and Floating Zone techniques. Investigating the central facets of dislocation-free crystals as a baseline allowed for the determ
Externí odkaz:
https://doaj.org/article/fdb84c6464eb4a6691ad7f9632ce0738
Publikováno v:
Solid State Phenomena. 342:91-98
The feasibility of thin 4H-SiC layers bonded on an alternative carrier substrate for the application as substrate in SiC epitaxy is investigated. Epitaxial layers grown on such substrates are compared to those on state-of-the-art conventional substra
Autor:
Scott S. Dossa, Ilya Ponomarev, Boris N. Feigelson, Marc Hainke, Christian Kranert, Jochen Friedrich, Jeffrey J. Derby
Publikováno v:
Journal of Crystal Growth. 609:127150
High-performance multi-crystalline silicon material (HPmc-Si) dominates the market for casted p-type silicon. Solar cells made from HPmc-Si material might suffer from light induced degradation due to the so called sponge-LID mechanism. In this work,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7289441c8265c08aac4bd297bf04edee
https://publica.fraunhofer.de/handle/publica/251228
https://publica.fraunhofer.de/handle/publica/251228
Publikováno v:
Journal of Raman Spectroscopy. 46:167-170
We report on the influence of free charge carriers on longitudinal optical (LO) phonons with large wave vectors in wurtzite semiconductors, which are observed by Raman scattering with excitation photon energy above the band gap. Charge carriers induc
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 8:554-559
Autor:
Marius Grundmann, Jorge L. Cholula-Díaz, Harald Krautscheid, Pablo Esquinazi, José Barzola-Quiquia, Christian Kranert, Tom Michalsky
Publikováno v:
Phys. Chem. Chem. Phys.. 16:21860-21866
Millimeter size high quality crystals of CuGaS2 were grown by chemical vapor transport. The highly ordered chalcopyrite structure is confirmed by X-ray diffraction and Raman spectroscopy. According to energy dispersive X-ray spectroscopy the composit
Publikováno v:
Scientific Reports
The Raman spectrum and particularly the Raman scattering intensities of monoclinic β-Ga2O3 are investigated by experiment and theory. The low symmetry of β-Ga2O3 results in a complex dependence of the Raman intensity for the individual phonon modes
Autor:
R. Schmidt-Grund, Marius Grundmann, Friedhelm Bechstedt, Christian Kranert, Chris Sturm, Jürgen Furthmüller
Publikováno v:
Physical Review B. 94
We apply a generalized model for the determination and analysis of the dielectric function of optically anisotropic materials with color dispersion to phonon modes and show that it can also be generalized to excitonic polarizabilities and electronic
Publikováno v:
Physical review letters. 116(12)
We present a formalism for calculating the Raman scattering intensity dependent on the polarization configuration for optically anisotropic crystals. It can be applied to crystals of arbitrary orientation and crystal symmetry measured in normal incid