Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Christian Koppka"'
Autor:
Thomas Hannappel, Peter Kleinschmidt, Christian Koppka, Manali Nandy, Frank Dimroth, Agnieszka Paszuk, Markus Feifel
Publikováno v:
Crystal Growth & Design. 21:5603-5613
Autor:
Frank Dimroth, Christian Koppka, Manali Nandy, Thomas Hannappel, Peter Kleinschmidt, Agnieszka Paszuk, Markus Feifel
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Recent advances in III-V-on-Si heteroepitaxy have led to the demonstration of multi junction solar cells with improved photovoltaic conversion efficiencies. However, their performance is still limited by a high defect concentration at the GaP/Si(100)
Autor:
Erich Runge, Andreas Nägelein, Oliver Supplie, Anja Dobrich, Peter Kleinschmidt, Matthias Steidl, Oleksandr Romanyuk, Agnieszka Paszuk, Thomas Hannappel, Lars Winterfeld, Christian Koppka
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 64:103-132
The integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. In the last decade, there have been tre
Autor:
Christian Koppka, Bernd Hähnlein, Frank Schwierz, Jörg Pezoldt, Sebastian Thiele, Yan Mi, Marco Eckstein, Rui Xu, Yong Lei
Publikováno v:
Materials Science Forum. 924:506-510
Aluminium oxide was deposited on silicon, silicon carbide and epitaxial graphene grown on silicon carbide by atomic layer deposition using a standard MOCVD equipment. The morphology and the electrical properties of the aluminium oxide layers on both
Autor:
Oliver Supplie, Sebastian Brückner, Peter Kleinschmidt, Marek Duda, Christian Koppka, Agnieszka Paszuk, Thomas Hannappel, Anja Dobrich
Publikováno v:
Journal of Crystal Growth. 464:14-19
III-V integration on active Si-bottom cells promises not only high-efficiency multi-junction solar cells but also lower production costs. In situ preparation of an adequate Si p-n junction in metalorganic chemical vapor deposition ambient is challeng
Suppression of Rotational Twin Formation in Virtual GaP/Si(111) Substrates for III–V Nanowire Growth
Autor:
Oliver Supplie, Matthias Steidl, Christian Koppka, Thomas Hannappel, Peter Kleinschmidt, Agnieszka Paszuk
Publikováno v:
Crystal Growth & Design. 16:6208-6213
Planar GaP epilayers on Si(111) are considered as virtual substrates for III–V-related optoelectronic devices such as high-efficiency nanowire-based tandem absorber structures for solar energy conversion, next generation LEDs, and fast photodetecto
Autor:
Erich Runge, Daniel Abou-Ras, Christian Koppka, Thomas Hannappel, Lars Winterfeld, Oliver Supplie, Peter Kleinschmidt
Publikováno v:
Physical Review Materials. 2
Based on density functional theory calculations, the authors develop a general model for nucleation of III-V semiconductors on vicinal nonpolar (111)-oriented substrates. This model predicts, in particular, that the atomic structure of the step edges
Autor:
Oleksandr Romanyuk, Oliver Supplie, Thomas Hannappel, Gernot Ecke, Pingo Mutombo, Christian Koppka, Peter Kleinschmidt, Andreas Nägelein, Stefan Krischok, Matthias Steidl, Agnieszka Paszuk, Theresa Berthold, Marcel Himmerlich
Publikováno v:
Applied Surface Science. 534:147346
Controlling the surface formation of the group-V face of (1 1 1)-oriented III-V semiconductors is crucial for subsequent successful growth of III-V nanowires for electronic and optoelectronic applications. With a view to preparing GaP/Si(1 1 1) virtu
Publikováno v:
Physical Review B. 98
We report the room-temperature dielectric function (DF) of GaPN grown lattice-matched on Si(100). Data were derived from spectroscopic ellipsometry measurements on a series of films prepared by metalorganic vapor phase epitaxy. The Kramers-Kronig ana
Autor:
Thomas Hannappel, Beatriz Galiana, Lars Winterfeld, Matthias Steidl, Erich Runge, Oliver Supplie, Christian Koppka, Peter Kleinschmidt, Katharina Peh
Publikováno v:
e-Archivo. Repositorio Institucional de la Universidad Carlos III de Madrid
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Pseudomorphic planar III-V transition layers greatly facilitate the epitaxial integration of vapor liquid solid grown III-V nanowires (NW) on Si(111) substrates. Heteroepitaxial (111) layer growth, however, is commonly accompanied by the formation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c687fe85840f97c5ab973bf13ba6aaf1
https://doi.org/10.1021/acsnano.7b01228
https://doi.org/10.1021/acsnano.7b01228