Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Christian Hindrichsen"'
Publikováno v:
Crystals, Vol 12, Iss 12, p 1703 (2022)
Laplace photoinduced transient spectroscopy has been applied to determine the electronic properties and concentrations of deep traps in high purity n-type silicon irradiated with high fluences of 23-MeV protons. From the temperature dependence of the
Externí odkaz:
https://doaj.org/article/07933b37adc1494ebaaac703a11d7a61
Publikováno v:
Journal of Crystal Growth. 512:65-68
It is well known that manufactures of power electronic devices rely on FZ silicon wafers of highest possible purity. The manufactures however also have a demand for wafers with lower and lower radial resistivity variation (RRV) across the wafer. The
Autor:
Michal Kwestarz, J. Jabłoński, Michal Kozubal, Pawel Kaminski, Jensen Leif, Christian Hindrichsen, Barbara Surma, Roman Kozlowski, Theis Leth Sveigaard
Publikováno v:
Solid State Phenomena. 242:279-284
High-resolution photoinduced transient spectroscopy (HRPITS) has been applied to determining the properties and concentrations of radiation defect centers formed in FZ silicon single crystals subjected to doping with phosphorus in neutron transmutati