Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Christian Gruensfelder"'
Autor:
Henry K. Utomo, T. Okawa, Deleep R. Nair, R. Divakaruni, Qintao Zhang, C. W. Lai, Liyang Song, Shin-Ae Lee, Emmanuel Josse, A. Pofelski, H. Onoda, Yue Liang, Chendong Zhu, X. Wu, William K. Henson, Christian Gruensfelder, Judson R. Holt, R.Q. Williams, Thomas A. Wallner, E. Kaste, Y. M. Lee, J.W. Weijtmans, Brian J. Greene, Melanie J. Sherony, J. Brown
Publikováno v:
Proceedings of Technical Program of 2012 VLSI Technology, System and Application.
The eSiGe layout effect induced by PC-bounded or STI-bounded eSiGe shows impact on device performance and variability increase. For PC-bounded device, performance degradation could be explained by the mobility loss due to reducing eSiGe volume and le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::256c3a19fe8287f31557b297e4fd71aa
https://doi.org/10.1109/vlsi-tsa.2012.6210152
https://doi.org/10.1109/vlsi-tsa.2012.6210152
Autor:
Kevin K. Chan, Danny Shum, Kisang Kim, Bomy A. Chen, Connie Lo, Jay G. Harrington, Rebecca D. Mih, Hyun Koo Lee, Chung H. Lam, Dana Lee, Jeffrey B. Johnson, Andreas Schmidt, Amitay Levi, Jiang Yan, Kevin M. Houlihan, Christian Gruensfelder
Publikováno v:
Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42e1db71648380d0a35b06abdc0d3cfd
https://doi.org/10.7567/ssdm.2000.c-5-3
https://doi.org/10.7567/ssdm.2000.c-5-3
Autor:
Udo Schwalke, Gudrun Innertsberger, Christian Gruensfelder, Martin Kerber, Alexander Gschwandtner
Publikováno v:
MRS Proceedings. 567
We have realized direct-tunneling gate oxide (1.6nm) NMOS and PMOS transistors by means of through-the-gate-implantation in a comer parasitics-free shallow-trench-isolation CMOS technology. In order to take full advantage of in-situ cluster-tool proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03dfc9918459d83dde9fe949743091c3
https://doi.org/10.1557/proc-567-597
https://doi.org/10.1557/proc-567-597
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