Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Christian Gardin"'
Autor:
Charlotte Beylier, Christian Gardin, B. Le Gratiet, Alexandre Chagoya-Garzon, R. Bouyssou, J. Ducote, Matthieu Milléquant, Christophe Dezauzier, Alain Ostrovsky, Patrick Schiavone, Paolo Petroni
Publikováno v:
Proc.SPIE
Metrology, Inspection, and Process Control for Microlithography XXXIII
Metrology, Inspection, and Process Control for Microlithography XXXIII, Feb 2019, San Jose, United States. pp.109591M, ⟨10.1117/12.2511626⟩
Metrology, Inspection, and Process Control for Microlithography XXXIII
Metrology, Inspection, and Process Control for Microlithography XXXIII, Feb 2019, San Jose, United States. pp.109591M, ⟨10.1117/12.2511626⟩
In semiconductor fabs, electron microscopes are key equipment for metrology, failure analysis, physical characterization and defect review classification. In a wafer fab like ST Crolles 300mm, CDSEMs are generating more than 20 Million of images per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fcb8a6dfcee1ab055cfbacd2635fa899
https://hal.archives-ouvertes.fr/hal-02326560
https://hal.archives-ouvertes.fr/hal-02326560
Autor:
Emek Yesilada, Mazen Saied, Franck Foussadier, Yves Rody, Christian Gardin, Jerome Belledent, Jonathan Planchot, Frederic Robert, Amandine Borjon, Christophe Couderc, Frank Sundermann, Yorick Trouiller, Jean-Christophe Urbani
Publikováno v:
Microelectronic Engineering. 84:770-773
With the continuous reduction of layout dimension, critical dimension control becomes more and more tricky. Being one contribution of critical dimension variation, etch bias correction needs to get more accurate. The correction by rule-based optical
Autor:
Emek Yesilada, G. Kerrien, Catherine Martinelli, Florent Vautrin, Laurent Le Cam, Christophe Couderc, Jerome Belledent, Frank Sundermann, Patrick Schiavone, Franck Foussadier, Yorick Trouiller, Jonathan Planchot, Jean-Christophe Urbani, Patrick Montgomery, Mazen Saied, Frederic Robert, Amandine Borjon, Bill Willkinson, Yves Rody, Christian Gardin
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
Microelectronic Engineering, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
Microelectronic Engineering, Elsevier, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
Microelectronic Engineering, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
International audience; Assist features (AF) are an essential component of reticle enhancement techniques. Their use is indispensable in sub-100 nm technologies to ensure a maximum process window (PW) across chip, especially for critical levels. Inde
Autor:
Jonathan Planchot, Amandine Borjon, Vincent Farys, Yorick Trouiller, Emek Yesilada, Christophe Couderc, Frederic Robert, Nicolo Morgana, Bill Wilkinson, Jean Christophe Urbani, Yves Rody, J. L. Di-Maria, Jerome Belledent, Christian Gardin, Frank Sundermann, Franck Foussadier, G. Kerrien, Catherine Martinelli, Isabelle Schanen, Florent Vautrin, Laurent LeCam, Mazen Saied
Publikováno v:
SPIE Proceedings.
The perpetual shrinking in critical dimensions in semiconductor devices is driving the need for increased resolution in optical lithography. Increasing NA to gain resolution also increases Optical Proximity Correction (OPC) model complexity. Some opt
Autor:
Jonathan Planchot, Catherine Martinelli, Patrick Montgomery, Christophe Couderc, Emek Yesilada, Frederic Robert, Laurent LeCam, G. Kerrien, J. L. Di-Maria, Nicolo Morgana, Bill Wilkinson, Amandine Borjon, Yorick Trouiller, Jean-Christophe Urbani, Jerome Belledent, Franck Foussadier, Florent Vautrin, Mazen Saied, Yves Rody, Christian Gardin, Frank Sundermann, Jean-Damien Chapon, Vincent Farys
Publikováno v:
SPIE Proceedings.
Patterning isolated trenches for bright field layers such as the active layer has always been difficult for lithographers. This patterning is even more challenging for advanced technologies such as the 45nm node where most of the process optimization
Autor:
Scott Warrick, Will Conley, Mazen Saied, Yves Rody, Christian Gardin, Jonathan Planchot, Christophe Couderc, Patrick Montgomery, Pierre-Jerome Goirand, Catherine Martinelli, Amandine Borjon, Frank Sundermann, Bill Wilkinson, Yorick Trouiller, Jean-Christophe Urbani, Frederic Robert, Laurent Le Cam, Florent Vautrin, G. Kerrien, Jerome Belledent, Emic Yesilada, Vincent Farys
Publikováno v:
SPIE Proceedings.
Resolution Enhancement Techniques (RET) are inherently design dependent technologies. To be successful the RET strategy needs to be adapted to the type of circuit desired. For SOC (system on chip), the three main patterning constraints come from: -St
Autor:
Mazen Saied, Amandine Borjon, Jerome Belledent, Florent Vautrin, Laurent LeCam, Christophe Couderc, Franck Foussadier, Catherine Martinelli, Bill Wilkinson, Emek Yesilada, Yves Rody, Christian Gardin, Jean-Luc Di Maria, Frederic Robert, Nicolo Morgana, Vincent Farys, Jonathan Planchot, Yorick Trouiller, Patrick Montgomery, Frank Sundermann, Jean-Christophe Urbani, G. Kerrien
Publikováno v:
23rd European Mask and Lithography Conference.
Several qualification stages are required for new maskshop tools, first step is done by the maskshop internally. Taking a new writer for example, the maskshop will review the basic factory and site acceptance tests, including CD uniformity, CD linear
Autor:
Kevin Lucas, Amandine Borjon, Mazen Saied, Yves Rody, Christian Gardin, Christophe Couderc, Isabelle Schanen, Jerome Belledent, Laurent LeCam, Emek Yesilada, Franck Foussadier, Frank Sundermann, Yorick Trouiller, Jean-Christophe Urbani
Publikováno v:
SPIE Proceedings.
The quality of model-based OPC correction depends strongly on how the model is calibrated in order to generate a resist image as close to the desired shapes as possible. As the k1 process factor decreases and design complexity increases, the correcti
Autor:
Jerome Belledent, Patrick Schiavone, F. Foussadier, Christophe Couderc, Kevin Lucas, Frank Sundermann, Yorick Trouiller, Jean-Christophe Urbani, Amandine Borjon, Yves Rody, Christian Gardin
Publikováno v:
SPIE Proceedings vol. 6154, Optical Microlithography XIX
Ensuring robust patterning after OPC is becoming more and more difficult due to the continuous reduction of layout dimensions and diminishing process windows associated with each successive lithographic generation. Lithographers must guarantee high i
Autor:
Amandine Borjon, Patrick Schiavone, Frank Sundermann, Kyle Patterson, Yorick Trouiller, Jean-Christophe Urbani, Jerome Belledent, Kevin Lucas, Yves Rody, Christian Gardin, Christophe Couderc, Stanislas Baron, F. Foussadier
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2006, 83, Issues 4-9, pp.1017-1022. ⟨10.1016/j.mee.2006.01.034⟩
Microelectronic Engineering, 2006, 83, Issues 4-9, pp.1017-1022. ⟨10.1016/j.mee.2006.01.034⟩
Microelectronic Engineering, Elsevier, 2006, 83, Issues 4-9, pp.1017-1022. ⟨10.1016/j.mee.2006.01.034⟩
Microelectronic Engineering, 2006, 83, Issues 4-9, pp.1017-1022. ⟨10.1016/j.mee.2006.01.034⟩
Ensuring robust patterning after OPC is becoming more and more difficult due to the continuous reduction of layout dimensions and diminishing process windows associated with each successive lithographic generation. Lithographers must guarantee high i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dfb2f29442c8d94a5b03357359bfa6ef
https://hal.archives-ouvertes.fr/hal-00023226
https://hal.archives-ouvertes.fr/hal-00023226