Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Christian Ganibal"'
Publikováno v:
ECS Transactions. 6:327-332
In this paper, we present the low cost fabrication process of a partial and thick silicon-on-insulator (SOI) substrate for mixed power integration (low and high voltage devices on the same chip). It is based on the Lateral Epitaxial Growth over Oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f96bf2e28fa3714cd0691fb36bb2d2f
https://doi.org/10.1149/1.2728878
https://doi.org/10.1149/1.2728878
Publikováno v:
Microelectronics Journal. 37:257-261
This paper focuses on the process fabrication of a partial silicon-on-insulator (SOI) substrate for mixed power integration (low and high voltage devices on the same chip) at low cost. More specifically, such application would require a silicon subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::889364354cf01b91ce1486941fda1182
https://doi.org/10.1016/j.mejo.2005.09.029
https://doi.org/10.1016/j.mejo.2005.09.029
Publikováno v:
Microelectronics Reliability. 43:565-569
The main feature of the thermomigration of Al/Si liquid droplets in silicon for the realization of isolation walls in bi-directional power devices is its low thermal budget. Therefore, it is compatible with the utilization of epitaxial substrates for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2e54686aae1383ffd095ecad299d392
https://doi.org/10.1016/s0026-2714(03)00025-8
https://doi.org/10.1016/s0026-2714(03)00025-8
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 8:432-439
A model, using geometric optics, has been developed to calculate the illumination of a wafer inside a rapid thermal processor. The main parameters of the model are: the processing chamber geometry, the lamp number and location, the reflector characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90da9a532b2854d84036a751ac8b3e30
https://doi.org/10.1109/66.475185
https://doi.org/10.1109/66.475185
Publikováno v:
MEMS/MOEMS Components and Their Applications II.
Electrostatic micromirrors are yet a well-known topic in the world of MOEMS. But in some specific cases, the mirror dimensions should have to be extended in order to be able to switch beams of a larger diameter. In other words, the convergence in dim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65fce54da95c62b4b06ce81f5f4f6a5d
https://doi.org/10.1117/12.590270
https://doi.org/10.1117/12.590270
Publikováno v:
11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).
An alternative method for creating total vertical junction insulation for power devices is presented. It involves the thermomigration of molten Al/Si. First, the method is theoretically detailed. A full description of the equipment required for this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::102f404a89e48c39643599f4ae56bc96
https://doi.org/10.1109/ispsd.1999.764107
https://doi.org/10.1109/ispsd.1999.764107
Publikováno v:
Proceedings of IEEE Systems Man and Cybernetics Conference - SMC.
In this paper, we first present a simulation tool to calculate, in two dimensions, a 4" Si wafer irradiation distribution. Then, the heat diffusion equation is numerically solved in two dimensions, and thermal maps of the wafer are given vs. various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43436cb9ca952db09b86ceee2e77e59e
https://doi.org/10.1109/icsmc.1993.384842
https://doi.org/10.1109/icsmc.1993.384842
Publikováno v:
8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.
We present new experimental results about a method for creating thick silicon films on localized buried oxide layers, by superficial melting and solidification using a bank of tungsten halogen lamps. The purpose of this technique is to obtain cost-ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6fe0eb25cadb02f7e92961a32917b78
https://doi.org/10.1109/ispsd.1996.509484
https://doi.org/10.1109/ispsd.1996.509484
Publikováno v:
32nd European Solid-State Device Research Conference.
The thermomigration of Al/Si liquid droplets in silicon by means of a vertical temperature gradient has been studied as an alternative to boron diffusion for the realization of deep p + peripheral zones enabling reverse voltage-blocking capability of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41bed8b44e2ac84611a08800e1f52b55
https://doi.org/10.1109/essderc.2002.194935
https://doi.org/10.1109/essderc.2002.194935
Publikováno v:
SPIE Proceedings.
A new method for creating deep junctions extending through the whole thickness of a wafer has recently been demonstrated. Applications are in the field of high power devices. The method uses the thermomigration of melted Al/Si droplets in silicon and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f785cd7dafac6acfb2aa2c2a3673d16
https://doi.org/10.1117/12.425241
https://doi.org/10.1117/12.425241