Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Christian Fachmann"'
Autor:
Stephan Kudelka, Stefan Nawka, Theodor Doll, Tim Boescke, Elke Erben, Lothar Frey, Christian Fachmann
Publikováno v:
Microelectronic Engineering. 84:2883-2887
The influence of Si concentration in hafnium silicate dielectrics on thermal stability and dielectric permittivity was analyzed. A phase diagram was developed using GIXRD and FTIR measurement. The stabilization of the ''higher-k'' cubic/tetragonal ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc446230f53db2fe8a239ee63834c06c
https://doi.org/10.1016/j.mee.2007.02.011
https://doi.org/10.1016/j.mee.2007.02.011
Autor:
Heiner Ryssel, Tobias Erlbacher, Mathias Rommel, V. Yanev, Albena Paskaleva, B. Amon, Christian Fachmann, Johannes Heitmann, S. Petersen, Anton J. Bauer, Wenke Weinreich, Martin Lemberger, Uwe Schroeder
High-k dielectric layers (HfSixOy and ZrO2) with different film morphologies were investigated by tunneling atomic-force microscopy (TUNA). Different current distributions were observed for amorphous and nanocrystalline films by analyzing TUNA curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aff4027066349b69657518b1ed62fd19
https://publica.fraunhofer.de/handle/publica/215912
https://publica.fraunhofer.de/handle/publica/215912
Autor:
T. S. Boscke, Byoung Hun Lee, Stephan Kudelka, Johannes Heitmann, Seung-Chul Song, A. Avellan, Wolfgang H. Krautschneider, Uwe Schröder, J. Price, Paul Kirsch, B.S. Ju, Christian Fachmann, R. Jammy, G. Pant, Bruce E. Gnade, Shrinivas Govindarajan, C. Krug, P. Y. Hung
Publikováno v:
2006 International Electron Devices Meeting.
We show for the first time that control of the crystalline phases of HfO2 by tetravalent (Si) and trivalent (Y,Gd) dopants enables significant improvements in the capacitance equivalent thickness (CET) and leakage current in capacitors targeting deep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9220aea91b3b140977ecb1315958ae88
https://doi.org/10.1109/iedm.2006.347011
https://doi.org/10.1109/iedm.2006.347011
Autor:
M. Kerber, Christian Fachmann, H. Reisinger, Stephan Kudelka, Uwe Schröder, Johannes Heitmann
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27:321
Dielectric absorption in HfSiO has been investigated with transient floating potential measurements. This has been achieved by peripheral component interconnect-based recording after the application of conditioning pulses. Metal-insulator-semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22af094976c092c6ebbccd586fdf592c
https://doi.org/10.1116/1.3043532
https://doi.org/10.1116/1.3043532