Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Christian Dutto"'
Autor:
F. Pourchon, Rohit Goel, Kedar Janardan Dhori, Sylvain Clerc, Robin Wilson, Sebastien Marchal, Ricardo Gomez Gomez, Christian Dutto
Publikováno v:
ESSCIRC
This paper presents circuit monitoring, reviewing different classes of silicon monitoring solutions, the specificity of each class, and where they best fit in the life-cycle of circuit design. A diversified circuit monitoring strategy is presented, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbd245abf8deda721b548f1a462504fb
https://doi.org/10.1109/esscirc53450.2021.9567890
https://doi.org/10.1109/esscirc53450.2021.9567890
Autor:
Roberto Gonella, Tomasz Brozek, Meindert Lunenborg, J.-C. Giraudin, Christopher Hess, B. Martinet, Franck Arnaud, Laurent Garchery, Kelvin Doong, Christian Dutto
Publikováno v:
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
FDSOI technology has been proposed as an alternative device scaling path which offers benefits of tunable, superior electrostatics transistor while maintaining simplicity of planar integration. New device type and integration elements brought up chal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a72e8b73807c533b30a2107a5789d234
https://doi.org/10.1109/s3s46989.2019.9320727
https://doi.org/10.1109/s3s46989.2019.9320727
Autor:
Ricardo Gomez Gomez, Christian Dutto, Vincent Huard, Philippe Flatresse, Sylvain Clerc, Edwige Bano
Publikováno v:
2017 S3S Proceedings
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.21.5, ⟨10.1109/S3S.2017.8309212⟩
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.21.5, ⟨10.1109/S3S.2017.8309212⟩
session: FDSOI Circuits 2; International audience; In this paper, a built-in Body Bias design methodology is proposed and implemented in two different contexts: the automotive industry and the IoT paradigm. As opposed to the traditional design strate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fed6534cdf7fde06ddd62f827d059cbd
https://doi.org/10.1109/s3s.2017.8309212
https://doi.org/10.1109/s3s.2017.8309212
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2016, 125, pp.133-141. ⟨10.1016/j.sse.2016.07.013⟩
Solid-State Electronics, Elsevier, 2016, 125, pp.133-141. ⟨10.1016/j.sse.2016.07.013⟩
International audience; The development of high-voltage MOSFET (HVMOS) is necessary for including power management or radiofrequency functionalities in CMOS technology. In this paper, we investigate the fabrication and optimization of an Extended Dra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3e5343eb389ec4fc532cff10ae48f5f
https://hal.archives-ouvertes.fr/hal-02003158
https://hal.archives-ouvertes.fr/hal-02003158
Autor:
Antoine Litty, Alexandres Dartigues, Dominique Golanski, Christian Dutto, Sorin Cristoloveanu, Sylvie Ortolland
Publikováno v:
International Journal of High Speed Electronics and Systems
International Journal of High Speed Electronics and Systems, World Scientific Publishing, 2016, 25 (1&2), pp.1640005. ⟨10.1142/S012915641640005X⟩
9th Workshop on Frontiers in Electronics 2015 (WOFE-15)
9th Workshop on Frontiers in Electronics 2015 (WOFE-15), Dec 2015, San Juan, Puerto Rico. ⟨10.1142/9789813220829_0005⟩
International Journal of High Speed Electronics and Systems, World Scientific Publishing, 2016, 25 (1&2), pp.1640005. ⟨10.1142/S012915641640005X⟩
9th Workshop on Frontiers in Electronics 2015 (WOFE-15)
9th Workshop on Frontiers in Electronics 2015 (WOFE-15), Dec 2015, San Juan, Puerto Rico. ⟨10.1142/9789813220829_0005⟩
High-Voltage MOSFETs are essential devices for complementing and extending the domains of application of any core technology including low-power, low-voltage CMOS. In this paper, we propose and describe advanced Extended-Drain MOSFETs, designed, proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ffc81b29f5902f83a065633fc54b0b88
https://hal.archives-ouvertes.fr/hal-02008114
https://hal.archives-ouvertes.fr/hal-02008114
Publikováno v:
2015 ESSDERC Proceedings
2015 ESSDERC-45th European Solid-State Device Research Conference
2015 ESSDERC-45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.134-137, ⟨10.1109/ESSDERC.2015.7324731⟩
ESSDERC
2015 ESSDERC-45th European Solid-State Device Research Conference
2015 ESSDERC-45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.134-137, ⟨10.1109/ESSDERC.2015.7324731⟩
ESSDERC
session A7L-F: Innovation Approaches for Opto and Power Devices; International audience; We have already demonstrated the fabrication of a Dual-Ground Plane Extended Drain MOSFET with 28nm FDSOI technology. The detrimental consequences of ultrathin S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b29cc22a44edcf3ed9b9d25fed1c805
https://hal.archives-ouvertes.fr/hal-02004187
https://hal.archives-ouvertes.fr/hal-02004187
Conference
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