Výsledky vyhledávání - "Christian Dussarrat"

Akademický článek

High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

Autor: Jesús Cañas, Daniel F. Reyes, Alter Zakhtser, Christian Dussarrat, Takashi Teramoto, Marina Gutiérrez, Etienne Gheeraert

Publikováno v: Nanomaterials, Vol 12, Iss 23, p 4125 (2022)

Silicon oxide atomic layer deposition synthesis development over the last few years has open the route to its use as a dielectric within diamond electronics. Its great band-gap makes it a promising material for the fabrication of diamond–metal–ox

Externí odkaz: https://doaj.org/article/25f2b694eca14108806935c21e976869

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Assessing the Environmental Impact of Atomic Layer Deposition (ALD) Processes and Pathways to Lower It

Autor: Matthieu Weber, Nils Boysen, Octavio Graniel, Abderrahime Sekkat, Christian Dussarrat, Paulo Wiff, Anjana Devi, David Muñoz-Rojas

Due to concerns on resources depletion, climate change, and overall pollution, the quest toward more sustainable processes is becoming crucial. Atomic layer deposition (ALD) is a versatile technology, allowing for the precise coating of challenging s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4cc67cce60d43949bd512dcd69ec66fc

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Nf3 And F2 Gas Fluorination of Gan Surface and Pt/Gan Interface Analyzed by Hard X-Ray Photoelectron Spectroscopy

Autor: Asahiko Matsuda, Takashi Teramoto, Takahiro Nagata, Dominic Gerlach, Peng Shen, S. Ueda, Takako Kimura, Christian Dussarrat, Toyohiro CHIKYO

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d2d64f18b0a3de0859ece388015831ad
https://doi.org/10.2139/ssrn.4409130

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High-Quality

Autor: Jesús, Cañas, Daniel F, Reyes, Alter, Zakhtser, Christian, Dussarrat, Takashi, Teramoto, Marina, Gutiérrez, Etienne, Gheeraert

Publikováno v: Nanomaterials (Basel, Switzerland). 12(23)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::2e140722de8d4c56061570e152fa3b10
https://pubmed.ncbi.nlm.nih.gov/36500747

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High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2Gate Dielectric

Autor: Yongpeng Zhang, Christian Dussarrat, Jie Qi, Wenqing Zhu, Jun Yang, Qianqian Wu, Jianhua Zhang, Xingwei Ding

Publikováno v: IEEE Transactions on Electron Devices. 66:3382-3386

The high-performance ZnO thin-film transistors (TFTs) were fabricated on indium tin oxide glass with high-capacitance atomic layer deposition (ALD)-processed ZrO2 as the gate dielectric. The 5-nm ultrathin ZrO2 film showed a very high areal capacitan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e9b8ded13545e5f73cb5b07beb9138b0
https://doi.org/10.1109/ted.2019.2924135

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Low-k integration: Gas screening for cryogenic etching and plasma damage mitigation

Autor: Philippe Lefaucheux, Christian Dussarrat, R. Chanson, Jean-Francois de Marneffe, Thomas Tillocher, Remi Dussart

Publikováno v: Frontiers of Chemical Science and Engineering. 13:511-516

The integration of porous organo-silicate low-k materials has met a lot of technical challenges. One of the main issues is plasma-induced damage, occurring for all plasma steps involved during interconnects processing. In the present paper, we focus

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d5c084f06f61a104f7392faba3f73db7
https://doi.org/10.1007/s11705-019-1820-5

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Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone

Autor: Hanearl Jung, Woo-Hee Kim, Jae Min Myoung, Whang Je Woo, Hyungjun Kim, Bo Eun Park, Yun Cheol Kim, Christian Dussarrat, Satoko Gatineau, Il Kwon Oh, Su Jeong Lee

Publikováno v: ACS Applied Materials & Interfaces. 10:2143-2150

We report the effect of Y2O3 passivation by atomic layer deposition (ALD) using various oxidants, such as H2O, O2 plasma, and O3, on In–Ga–Zn–O thin-film transistors (IGZO TFTs). A large negative shift in the threshold voltage (Vth) was observe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8c2229acb608313c10db4b7a33f7c198
https://doi.org/10.1021/acsami.7b14260

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Comparative study of two Atomic Layer Etching processes for GaN

Autor: Thierry Chevolleau, Takashi Teramoto, Christian Dussarrat, Etienne Gheeraert, H. Mariette, Christophe Durand, Christophe Vallée, C. Mannequin, Katsuhiro Akimoto

Publikováno v: 19th International Conference on Atomic layer Deposition (ALD2019)
19th International Conference on Atomic layer Deposition (ALD2019), Jul 2019, Bellevue, United States
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2020, 38 (3), pp.032602. ⟨10.1116/1.5134130⟩
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2020, 38 (3), pp.032602. ⟨10.1116/1.5134130⟩

International audience; Atomic layer etching (ALE) of Ga-polar GaN (0001) using a standard inductively coupled plasma-reactive ion etching system is achieved in this work. The sequential process is using Cl2 to modify the surface in the adsorption st

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c834170315838330cf6e7b073a54b274
https://hal.univ-grenoble-alpes.fr/hal-02338959

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