Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes

Autor: Eric Chartier, Piero Gamarra, Cedric Lacam, P. Altuntas, D. Lancereau, M. Oualli, O. Patard, C. Potier, L. Teisseire, Christian Dua, Stéphane Piotrowicz, J.C. Jacquet, Sylvain Delage

Publikováno v: Microelectronics Reliability. :418-422

On-wafer short term step-stress tests were carried out to evaluate InAlGaN/GaN HEMT devices. Three types of transistor were studied, each one having a specific two dielectric layer passivation. The results of these tests demonstrate that the upper la

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3d35ca6456ffd4a9819376706a4149b9
https://doi.org/10.1016/j.microrel.2018.07.142

Drain Current Recovery Time Analyses of InAlGaN/GaN HEMTs Realized with a Back-Barrier Buffer Layer

Autor: J.C. Jacquet, Piero Gamarra, Eric Chartier, Stéphane Piotrowicz, Sylvain Delage, C. Potier, M. Oualli, N. Michel, P. Altuntas, Christian Dua, Michel Prigent, Jean-Christophe Nallatamby, Cedric Lacam, O. Patard

Publikováno v: 2019 14th European Microwave Integrated Circuits Conference (EuMIC)
2019 14th European Microwave Integrated Circuits Conference (EuMIC), Sep 2019, Paris, France. pp.41-44, ⟨10.23919/EuMIC.2019.8909641⟩

This article presents the performances obtained on a $0.15 \mu \mathrm{m}$ gate length InAlGaN/GaN HEMT technology on SiC substrate. This technology uses a back-barrier buffer layer to ensure the confinement of electrons in the channel, which minimiz

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5766b9bd9074cac30bff4ad98d06099b
https://hal.archives-ouvertes.fr/hal-02460407

InAlGaN/GaN HEMT technology for Ka band applications

Autor: Didier Floriot, E. Charier, Stéphane Piotrowicz, J.C. Jacquet, N. Michel, Sylvain Delage, Hervé Blanck, M. Oualli, Christophe Chang, P. Altuntas, O. Patard, Christian Dua, Cedric Lacam, P. Fellon, C. Potier, Piero Gamarra

Publikováno v: 2018 22nd International Microwave and Radar Conference (MIKON).

Recent results obtained using InAlGaN/GaN HEMT technology. Material advantages of this heterostructure are depicted and some technological aspects are described. Low lagging effects and high electric field capability is presented. Power densities up

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::902804d4ebcb1229064811676d9b0423
https://doi.org/10.23919/mikon.2018.8405186

Highlighting trapping phenomena in microwave GaN HEMTs by low-frequencyS-parameters

Autor: Raphaël Aubry, Stéphane Piotrowicz, Christian Dua, M. Oualli, C. Potier, Raymond Quéré, Marie-Antoinette di Forte-Poisson, Sylvain Laurent, Olivier Jardel, Audrey Martin, Sylvain Delage, O. Patard, Piero Gamarra, Jean-Claude Jacquet, Michel Campovecchio

Publikováno v: International Journal of Microwave and Wireless Technologies
International Journal of Microwave and Wireless Technologies, Cambridge University Press/European Microwave Association 2015, 7 (3), pp 287-296. ⟨10.1017/S1759078715000094⟩

This paper presents an original characterization method of trapping phenomena in gallium nitride high electron mobility transistors (GaN HEMTs). This method is based on the frequency dispersion of the output-admittance that is characterized by low-fr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34d735dad9f3715d123afdf279845e63
https://doi.org/10.1017/s1759078715000094

Effects of single and multiple sessions of lower body diastole-synchronized compressions using a pulsating pneumatic suit on endothelium function and metabolic parameters in patients with type 2 diabetes: two controlled cross-over studies

Autor: Paul Valensi, Nicolas Barber-Chamoux, Amel Rezki, Céline Lambert, Bruno Pereira, Christian Dualé, Dominique Delmas, Martine Duclos

Publikováno v: Cardiovascular Diabetology, Vol 21, Iss 1, Pp 1-16 (2022)

Abstract Background Endothelium function is often impaired in patients with type 2 diabetes. We hypothesized that by improving endothelial function using diastole-synchronized compressions/decompressions (DSCD) to the lower body may improve the metab

Externí odkaz: https://doaj.org/article/ae6951630abe4c24ac136469542b7e3f