Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Christian Dais"'
Autor:
Lucas Güniat, Lea Ghisalberti, Li Wang, Christian Dais, Nicholas Morgan, Didem Dede, Wonjong Kim, Akshay Balgarkashi, Jean-Baptiste Leran, Renato Minamisawa, Harun Solak, Craig Carter, Anna Fontcuberta i Morral
Publikováno v:
Nanoscale Horizons. 7:211-219
Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which proces
Publikováno v:
Microelectronic Engineering. 177:9-12
Quasi-periodic structures with a high degree of rotational symmetry are desired for photonic applications because of their nearly isotropic optical response, in contrast to the highly directional behavior of periodic lattices. Here we introduce a met
Autor:
Joan Vila-Comamala, Li Wang, Marco Stampanoni, Harun H. Solak, Matias Kagias, Lucia Romano, Konstantins Jefimovs, Christian Dais, Zhentian Wang
Publikováno v:
Advances in Patterning Materials and Processes XXXIV
Despite the fact that the resolution of conventional contact/proximity lithography can reach feature sizes down to ~0.5-0.6 micrometers, the accurate control of the linewidth and uniformity becomes already very challenging for gratings with periods i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38814e703262e31e1f05930d63701374
http://arxiv.org/abs/1810.13156
http://arxiv.org/abs/1810.13156
Publikováno v:
Microelectronic Engineering. 161:104-108
Printing of sub-100nm half-pitch periodic structures is demonstrated using Displacement Talbot Lithography (DTL) and a deep ultra-violet light source. DTL is a recently developed mask-based photolithography for forming high-resolution periodic struct
Publikováno v:
Microelectronic Engineering. 143:74-80
Display Omitted We designed clear phase shift masks for use with Displacement Talbot Lithography.Simulated images show high-contrast and practically unlimited depth of focus.High-fidelity square and triangular motifs printed uniformly in photoresists
Autor:
S. V. Vaschenko, Mikhail Belkov, Toma Stoica, Inna Motevich, N. D. Strekal, Sergey V. Gaponenko, Hans Sigg, Christian Dais, Detlev Grützmacher, Anna Harbachova, Elena Klyachkovskaya
Publikováno v:
Plasmonics. 6:413-418
Semiconductor self-assembled Ge-on-Si quantum dot structures coated with Au film were successfully employed as surface-enhanced Raman scattering (SERS) substrates to characterize ultramarine blue inorganic art pigment. To assign the bands and to reve
Autor:
Thomas Fromherz, Harun H. Solak, E. Wintersberger, Elisabeth Müller, Rainer T. Lechner, J. Stangl, Christian Dais, Hans Sigg, Vaclav Holy, Detlev Grützmacher, G. Bauer
Publikováno v:
International Journal of Modern Physics B. 23:2836-2841
We report on the growth of SiGe quantum dot crystals which are realized by depositing Ge on a two-dimensionally pit-patterned Si substrate and subsequent growth of Si spacer and Ge island layers. Lateral periods of 100 nm are obtained by employing de
Autor:
Gerrit E. W. Bauer, E. Wintersberger, Elisabeth Müller, Harun H. Solak, Stefan Birner, Detlev Grützmacher, Thomas Fromherz, Václav Holý, Julian Stangl, Rainer T. Lechner, H. Sigg, Yasin Ekinci, Christian Dais
Publikováno v:
Nano Letters. 7:3150-3156
Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quan
Publikováno v:
Materials Science and Engineering: C. 27:947-953
A central challenge for modern device technology aiming towards nanoelectronics, spintronics and quantum computation is to implement exact control in the positioning of nanostructures like quantum dots. Templated self-organization, i.e. combining the
Autor:
Hans Sigg, Detlev Grützmacher, Harun H. Solak, Elisabeth Müller, Christian Dais, Yasin Ekinci
Publikováno v:
Surface Science. 601:2787-2791
Templated self-organization has been used to prepare two-dimensional arrays as well as three-dimensional quantum dot crystals (QDC) containing Ge dots in a Si host crystal. Si(1 0 0) substrates have been patterned with two-dimensional hole gratings u