Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Christellle Veytizou"'
Autor:
Sebastien Sollier, Julie Widiez, Gweltaz Gaudin, Frederic Mazen, Thierry Baron, Mickail Martin, Marie-Christine Roure, Pascal Besson, Christophe Morales, Elodie Beche, Frank Fournel, Sylvie Favier, Amelie Salaun, Patrice Gergaud, Maryline Cordeau, Christellle Veytizou, Ludovic Ecarnot, Daniel Delprat, Ionut Radu, Thomas Signamarcheix
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 6, Iss 4, p 19 (2016)
In this work, we demonstrate for the first time a 300-mm indium–gallium–arsenic (InGaAs) wafer on insulator (InGaAs-OI) substrates by splitting in an InP sacrificial layer. A 30-nm-thick InGaAs layer was successfully transferred using low tempera
Externí odkaz:
https://doaj.org/article/ffe38044688c423db103fb20f61af151
Autor:
Thierry Baron, Pascal Besson, Mickail Martin, Christophe Morales, Sebastien Sollier, Maryline Cordeau, Ionut Radu, Amelie Salaun, Thomas Signamarcheix, Ludovic Ecarnot, Marie-Christine Roure, Elodie Beche, Daniel Delprat, Christellle Veytizou, Gweltaz Gaudin, Sylvie Favier, Frank Fournel, Frédéric Mazen, Julie Widiez, Patrice Gergaud
Publikováno v:
Journal of Low Power Electronics and Applications; Volume 6; Issue 4; Pages: 19
Journal of Low Power Electronics and Applications, Vol 6, Iss 4, p 19 (2016)
Journal of Low Power Electronics and Applications, Vol 6, Iss 4, p 19 (2016)
In this work, we demonstrate for the first time a 300-mm indium–gallium–arsenic (InGaAs) wafer on insulator (InGaAs-OI) substrates by splitting in an InP sacrificial layer. A 30-nm-thick InGaAs layer was successfully transferred using low tempera