Innovative Low-Power Self-Nanoconfined Phase-Change Memory

Autor: Gauthier Lefevre, C. Sabbione, Sylvain David, Etienne Nowak, J. Garrione, N. Castellani, Marie-Claire Cyrille, Anna Lisa Serra, Nicolas Bernier, Christophe Vallée, Guillaume Bourgeois, Gabriele Navarro, Mathieu Bernard, O. Cueto, Christelle Charpin-Nicolle

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, 68 (2), pp.535-540. ⟨10.1109/TED.2020.3044267⟩
IEEE Transactions on Electron Devices, 2021, 68 (2), pp.535-540. ⟨10.1109/TED.2020.3044267⟩

International audience; In this paper, we demonstrate at array level and in industrial like devices, the extreme scaling down to nanometric dimensions of the Phase-Change Memory technology thanks to an innovative Self-Nano-Confined PCM device (SNC PC

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a85ded2bac29098bfe311f43f120a78b
https://hal-cea.archives-ouvertes.fr/cea-03119677/document

Structural properties of Ge-Sb-Te alloys

Autor: Etienne Nowak, J. Garrione, Hatun Cinkaya, Guillaume Bourgeois, Adil Ozturk, Marie Claire Cyrille, Gabriele Navarro, Nicolas Guillaume, Arif Sirri Atilla Hasekioglu, Zahit Evren Kaya, Seref Kalem, Christelle Charpin-Nicolle

Publikováno v: Solid-State Electronics

In this work, we have investigated the structural properties of Germanium (Ge)-Antimony (Sb)-Tellurium (Te) (GST) and Ge-rich GST thin film samples. The structural properties of the films are studied after annealing temperatures from room temperature

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fda486403a989dc5fdd44f9ae58f26a3

Annealing effects on the structure of Ge-Sb-Te alloys

Autor: Arif Sirri Atilla Hasekioglu, Gabriele Navarro, Hatun Cinkaya, Marie Claire Cyrille, Guillaume Bourgeois, Zahit Evren Kaya, Nicolas Guillaume, Christelle Charpin-Nicolle, Etienne Nowak, Seref Kalem, J. Garrione

Publikováno v: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

In the present study the structural properties of Germanium (Ge)-Antimony (Sb)-Tellurium (Te) (GST) and Ge-rich GST thin film samples are investigated after annealing temperatures ranging from room temperature up to 450°C. We performed the annealing

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::82509c3c3b6c437ff185ad2177a2a990
https://doi.org/10.1109/eurosoi-ulis49407.2020.9365326

Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories

Autor: M. Bonvalot, S. Martinie, R. Sommer, Ph. Blaise, E. Nowak, Christelle Charpin-Nicolle, S. Belahcen, M.L. Cordeau, E. Jalaguier, S. Bernasconi, B. Eychenne, A. Persico

Publikováno v: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2020, 221, pp.111194. ⟨10.1016/j.mee.2019.111194⟩
Microelectronic Engineering, 2020, 221, pp.111194. ⟨10.1016/j.mee.2019.111194⟩

International audience; In this work, we study the impact of roughness of TiN bottom electrode on the forming voltage of 1R TiN/HfO$_2$/Ti/TiN based ReRAM devices. A novel and atypical strategy is proposed to induce a controlled roughness of the bott

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6eaffd9a32936ba97cf917c21f1a5aea

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

Autor: Eszter Piros, Eric Jalaguier, Christelle Charpin-Nicolle, Leopoldo Molina-Luna, Aldin Radetinac, Emmanuel Nolot, Tobias Vogel, Stefan Petzold, Enrique Miranda, Philipp Komissinskiy, Nico Kaiser, Alexander Zintler, Lambert Alff, Robert Eilhardt, Christian Wenger

Publikováno v: Advanced Electronic Materials

This work investigates the transition from digital to gradual or analog resistive switching in yttrium oxide-based resistive random-access memory devices. It is shown that this transition is determined by the amount of oxygen in the functional layer.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9158f40d8f835afef250960be969056
https://doi.org/10.1002/aelm.202000439