Zobrazeno 1 - 10
of 255
pro vyhledávání: '"Chris Palmstrom"'
Autor:
Malcolm J. A. Jardine, Derek Dardzinski, Maituo Yu, Amrita Purkayastha, An-Hsi Chen, Yu-Hao Chang, Aaron Engel, Vladimir N. Strocov, Moïra Hocevar, Chris Palmstro̷m, Sergey M. Frolov, Noa Marom
Publikováno v:
ACS Applied Materials & Interfaces. 15:16288-16298
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c343bda8f1fd17380d8549e9f59316b7
https://doi.org/10.1021/acsami.3c00323
https://doi.org/10.1021/acsami.3c00323
Autor:
Patrick J. Taylor, Sean D. Harrington, Owen Vail, Barbara Nichols, George de Coster, Alex Chang, Patrick Folkes, Chris Palmstrom
Publikováno v:
Journal of Electronic Materials. 50:6329-6336
α-Sn has been hailed as a single-element topological material with great promise for spintronic applications due to its strong spin–orbit coupling. Epitaxial growth on CdTe is identified as a method to isolate the novel electronic properties of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::711f3bbe7f963ec8bdd9f147635616ea
https://doi.org/10.1007/s11664-021-09126-w
https://doi.org/10.1007/s11664-021-09126-w
Autor:
Aidan A. Taylor, Bei Shi, Aranya Goswami, Jonathan Klamkin, Chris Palmstrom, Simone Tommaso Suran Brunelli
Publikováno v:
Crystal Growth & Design. 20:7761-7770
Heteroepitaxy of III–V compound semiconductors on silicon (Si) or silicon-on-insulator (SOI) substrates is of great interest for photonics and electronics applications. In this work, antiphase-boun...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77f7aa17cdc6caddde0846fca9a158aa
https://doi.org/10.1021/acs.cgd.0c00988
https://doi.org/10.1021/acs.cgd.0c00988
Autor:
Chris Palmstrom, Elliot Young, Anders Mikkelsen, Sebastian Lehmann, Nathaniel Wilson, Yi Liu, Kimberly A. Dick, Rainer Timm, Johan Knutsson
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
Nature Communications
Nature Communications
Scaling down material synthesis to crystalline structures only few atoms in size and precisely positioned in device configurations remains highly challenging, but is crucial for new applications e.g., in quantum computing. We propose to use the sidew
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::727b0c448e408f3b19d87904ed319f88
https://doi.org/10.1038/s41467-021-26148-4
https://doi.org/10.1038/s41467-021-26148-4
Publikováno v:
Journal of applied physics, vol 130, iss 7
J Appl Phys
J Appl Phys
Progress in computing architectures is approaching a paradigm shift: traditional computing based on digital complementary metal-oxide semiconductor technology is nearing physical limits in terms of miniaturization, speed, and, especially, power consu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0bc53c1e7ff83c56285b950ffc2fe79
https://escholarship.org/uc/item/3hw414rh
https://escholarship.org/uc/item/3hw414rh
Autor:
Jonathan Klamkin, Aranya Goswami, Hsin-Ying Tseng, Simone Tommaso Suran Brunelli, Mark J. W. Rodwell, Brian Markman, Chris Palmstrom
Publikováno v:
Crystal Growth & Design. 19:7030-7035
We report on the successful integration of multiple atomically thin horizontal heterojunctions (HJs) epitaxially grown via metal organic chemical vapor deposition inside a confined template of diel...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d5f0651c74296e8969e3caad88d4dd1
https://doi.org/10.1021/acs.cgd.9b00843
https://doi.org/10.1021/acs.cgd.9b00843
Publikováno v:
ACS Photonics. 6:1345-1350
Achieving an electrically tunable phased array optical antenna surface has been a principal challenge in the field of metasurfaces. In this Letter, we demonstrate a device platform for achieving reconfigurable control over the resonant wavelength of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cd073199b9383fcd1b8175f7901502b
https://doi.org/10.1021/acsphotonics.9b00178
https://doi.org/10.1021/acsphotonics.9b00178
Autor:
Sebastian Koelling, Leo Miglio, Marcel A. Verheijen, Michiel W. A. de Moor, Stan M. E. Peters, Qingzhen Wang, Leo P. Kouwenhoven, Roy L. M. Op het Veld, Jouri D. S. Bommer, Chuyao Tong, Hao Zhang, Bart Hesselmann, Chris Palmstrom, Joon Sue Lee, Mihir Pendharkar, Di Xu, Kiefer Vermeulen, Jason Jung, Erik P. A. M. Bakkers, Anna Marzegalli, Andrey Sarikov, Vanessa Schaller
Publikováno v:
Communications Physics, Vol 4, Iss 1, Pp 1-1 (2021)
The Data availability statement of this article has been modified to add the accession link to the raw data. The old Data availability statement read “Materials and data that support the findings of this research are available within the paper. All
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::108b1084bee9286fac1a37a21993623c
https://doi.org/10.1038/s42005-021-00578-4
https://doi.org/10.1038/s42005-021-00578-4
Autor:
Sebastian Heedt, John A. Logan, Jiyin Wang, Daniël Bouman, Leo P. Kouwenhoven, Francesco Borsoi, B. van Heck, Vukan Levajac, Diana Car, Chris Palmstrom, D. van Driel, R. L. M. Op het Veld, Erik P. A. M. Bakkers, Mihir Pendharkar, Sasa Gazibegovic, Jie Shen, Georg W. Winkler
Publikováno v:
Physical Review B, 104(4)
We measure the charge periodicity of Coulomb blockade conductance oscillations of a hybrid InSb-Al island as a function of gate voltage and parallel magnetic field. The periodicity changes from $2e$ to $1e$ at a gate-dependent value of the magnetic f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::984ee2c3d79f0fe443dfcaec0eb26326
http://arxiv.org/abs/2012.10118
http://arxiv.org/abs/2012.10118
Autor:
Chris Palmstrom, Aranya Goswami, Jonathan Klamkin, Kunal Mukherjee, Hsin-Ying Tseng, Brian Markman, Simone Tommaso Suran Brunelli, Aidan A. Taylor, Mark J. W. Rodwell
Publikováno v:
Physical Review Materials. 4
The selective area growth technique, confined epitaxial lateral overgrowth (CELO), enables the growth of lateral III-V heterojunctions integrated on mismatched substrates. In CELO, effective control of facet shapes, as well as defect-free growths are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01c08aa3a7392a51a0a707eac71d30a4
https://doi.org/10.1103/physrevmaterials.4.123403
https://doi.org/10.1103/physrevmaterials.4.123403