Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Chris Leitz"'
Publikováno v:
IEEE Transactions on Electron Devices. 70:563-569
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::591ca9d6cd0c1d2b5b11069a0543bdcf
https://doi.org/10.1109/ted.2022.3233288
https://doi.org/10.1109/ted.2022.3233288
Autor:
Tanmoy Chattopadhyay, Sven Herrmann, Barry E. Burke, Kevan Donlon, Gregory Prigozhin, Glenn Morris, Peter Orel, Michael Cooper, Andrew Malonis, Daniel R. Wilkins, Vyshnavi Suntharalingam, Steven W. Allen, Marshall W. Bautz, Chris Leitz
Publikováno v:
Journal of Astronomical Telescopes, Instruments, and Systems. 8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fae5d8441c985adcbb0d7060a6ba198e
https://doi.org/10.1117/1.jatis.8.2.026006
https://doi.org/10.1117/1.jatis.8.2.026006
Autor:
Minjoo L. Lee, Zhiyuan Cheng, Eugene A. Fitzgerald, Gianni Taraschi, Chris Leitz, Matthew T. Currie, Dimitri A. Antoniadis, Thomas A. Langdo, Judy L. Hoyt, Arthur J. Pitera
Publikováno v:
Journal of Electronic Materials. 30:L37-L39
The fabrication of 4 in, relaxed Si1−xGex-on-insulator (SGOI) substrates by layer transfer was demonstrated. A high-quality relaxed Si1−xGex layer was grown using ultrahigh vacuum chemical vapor deposition (UHVCVD) on 4 in. Si donor wafers. Thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be4c7032fdc9eef8d6ccb2ca0867e91e
https://doi.org/10.1007/s11664-001-0182-0
https://doi.org/10.1007/s11664-001-0182-0
Autor:
David V. Forbes, Stephen J. Polly, Seth M. Hubbard, Ryne P. Raffaelle, Mike P. Brindak, Chelsea Plourde, Christopher G. Bailey, Jeremiah S. McNatt, Chris Leitz, Christopher J. Vineis
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
Space bound photovoltaics utilize crystalline III–V material systems to achieve extremely high conversion efficiencies. The measure of these devices is not ultimate conversion efficiency but specific power density, which can be limited by the bulky
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::429f13b0126c07f6a75982a54d151f5b
https://doi.org/10.1109/pvsc.2009.5411288
https://doi.org/10.1109/pvsc.2009.5411288
Publikováno v:
Applied Physics Letters. 72:1608-1610
InxGa1−xAs structures with compositionally graded buffers were grown with organometallic vapor phase epitaxy on GaAs substrates and characterized with plan-view and cross-sectional transmission electron microscopy, atomic force microscopy, and x-ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bd153ef06b7cabd80cb8bcd5be356bf
https://doi.org/10.1063/1.121129
https://doi.org/10.1063/1.121129
Autor:
Gianni Taraschi, Chris Leitz, Minjoo L. Lee, Dimitri A. Antoniadis, Judy L. Hoyt, Matthew T. Currie, Zhiyuan Cheng, Arthur J. Pitera, Eugene A. Fitzgerald
Publikováno v:
MRS Proceedings. 686
We have fabricated high quality SGOI substrates and demonstrated high mobility enhancement in strained-Si MOSFET's fabricated on the relaxed SGOI substrates with a Ge content of 25%. The substrates were fabricated by wafer bonding. The initial relaxe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e7c06f5177213d5c0075d298f7d1072
https://doi.org/10.1557/proc-686-a1.5
https://doi.org/10.1557/proc-686-a1.5
Autor:
M.F. Li, Chunxiang Zhu, Anthony Lochtefeld, Chris Leitz, Zhiyuan Cheng, Andrew A. O. Tay, Jidong Huang, Qingchun Zhang, Nan Wu
Publikováno v:
Applied Physics Letters. 88:143506
In this Letter, metal-oxide-semiconductor capacitors were fabricated and characterized on compressively strained Si50Ge50 on Si0.8Ge0.2 virtual substrates by using metal-organic chemical vapor deposition HfO2 as gate dielectric and TaN as metal gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::533c3e7af5edd0b0841c721dfa5c8b3f
https://doi.org/10.1063/1.2191468
https://doi.org/10.1063/1.2191468