Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Chris Kendrick"'
Autor:
J.P. Gambino, Kaitlyn Pabst, B. Greenwood, Konner E. K. Holden, Chris Kendrick, Derryl Allman, Robin Daugherty, Gavin D. R. Hall, Michael Cook
Publikováno v:
IRPS
High-K metal-insulator-metal capacitors are used in many high-performance applications that require both excellent energy storage and minimal energy loss. Often the increase in dielectric permittivity is coupled with an increase in dielectric relaxat
Publikováno v:
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS).
Negative bias temperature instability (NBTI) is a major concern for CMOS reliability. In this paper extraction methods for threshold voltage shift from drain current versus gate voltage transfer curve and from single drain current value in NBTI chara
Autor:
Chris Kendrick, Tom Kopley, Osama O. Awadelkarim, S.A. Suliman, Gavin D. R. Hall, Jifa Hao, Michael Cook, Amartya Ghosh
Publikováno v:
IRPS
Bias Temperature Instability (BTI) measurements were performed on SiC n-channel DMOSFETs. The effects of the BTI stress on the electrical characteristics of the device were studied using slow and fast measurements. The slow Measurements show that the
Autor:
Jiri Slezak, Chris Kendrick, J.P. Gambino, Y. Watanabe, T. Hirano, K. Ozeki, Michael Cook, Tracy Myers, T. Sano
Publikováno v:
IRPS
High resistance polysilicon resistors have been characterized by DC and pulsed I-V sweep measurements, resistance vs. temperature, and DC and pulsed voltage stress/measurement cycling. The combination of these measurements along with resistor lineari
Autor:
Chris Kendrick
Publikováno v:
Proceedings of the Institution of Civil Engineers - Energy. 160:95-97
Thermal bridging has become more of an issue following the introduction of the 2006 revision part L of the Building Regulations for England and Wales. The term refers to the additional heat loss from a building as a result of either geometry (for exa
Publikováno v:
2008 IEEE International Reliability Physics Symposium.
The failure mechanisms for NLDMOS transistors subjected to rectangular power pulses are investigated. The study confirms by measurement and simulation that the transistors survive single power pulses up to an energy that causes snapback at a critical
Autor:
Chris Kendrick, Yu-Hsing Cheng
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
Post package trimming is important in achieving precise control of circuit parameters that may shift due to package stresses. However, the size of on-chip driver circuitry must be minimized while still maintaining reliably trimmed fuses. This study p
Publikováno v:
Journal of Strength and Conditioning Research. 24:1
Publikováno v:
Structural Survey; Nov2007, Vol. 25 Issue 5, p355-374, 20p