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Autor:
James S. Clarke, Ramanan V. Chebiam, Seung Hoon Sung, Chris Jezewski, Bob Turkot, Hui Jae Yoo, Jasmeet S. Chawla, Colin T. Carver, Tronic Tristan A
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
Assessing metal gap fill capability and electrical behavior in patterned features ahead of full integration is valuable in interconnect process development as feature sizes scale beyond the 14 nm technology node. In this work a simple device is fabri