Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Chris Drijbooms"'
Autor:
Umberto Celano, Andres Gomez, Paola Piedimonte, Sabine Neumayer, Liam Collins, Mihaela Popovici, Karine Florent, Sean R. C. McMitchell, Paola Favia, Chris Drijbooms, Hugo Bender, Kristof Paredis, Luca Di Piazza, Stephen Jesse, Jan Van Houdt, Paul van der Heide
Publikováno v:
Nanomaterials, Vol 10, Iss 8, p 1576 (2020)
The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes o
Externí odkaz:
https://doaj.org/article/ad7caa6c7cc54dbabdff908aa25de20f
Autor:
Liam Collins, Stephen Jesse, Umberto Celano, S. R. C. McMitchell, Paola Piedimonte, Chris Drijbooms, Kristof Paredis, Paul van der Heide, Hugo Bender, Luca Di Piazza, Sabine M. Neumayer, Mihaela Popovici, Jan Van Houdt, Paola Favia, Karine Florent, Andrés Gómez
Publikováno v:
Nanomaterials
BASE-Bielefeld Academic Search Engine
Nanomaterials, Vol 10, Iss 1576, p 1576 (2020)
Volume 10
Issue 8
Digital.CSIC. Repositorio Institucional del CSIC
instname
BASE-Bielefeld Academic Search Engine
Nanomaterials, Vol 10, Iss 1576, p 1576 (2020)
Volume 10
Issue 8
Digital.CSIC. Repositorio Institucional del CSIC
instname
The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes o
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-15 (2020)
Scientific Reports
Scientific Reports
Scanning Spreading Resistance Microscopy is a well-established technique for obtaining quantitative two- and three-dimensional carrier profiles in semiconductor devices with sub-nm spatial resolution. However, for sub-100 nm devices, the use of focus
Autor:
A. Kanniainen, Chris Drijbooms, Thijs Boehme, Hugo Bender, N. Bosman, P. van der Heide, Thomas Hantschel, Steven Folkersma, Kristof Paredis, Umberto Celano, Lennaert Wouters, Wilfried Vandervorst
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
A new method is proposed to enable high-throughput and high-resolution electrical atomic force microscopy in nanoelectronics. Using a reversed pathway of operation, our technique yields a shorter time-to-data (
Autor:
Hugo Bender, Chris Drijbooms, David Erickson, Andrew Cockburn, Alain Moussa, Harold Philipsen, Kevin Vandersmissen, Herbert Struyf
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:Q109-Q119
Summary The early capture of process issues or drifts for all the operationsin a process module is important to avoid material scrapping. Investi-gating the quality of the incoming material (e.g. the FEOL module(s)in case of a via-middle TSV flow) a
Autor:
Hugo Bender, Alex Radisic, Chris Drijbooms, Wouter Ruythooren, Harold Philipsen, S. Rodet, Ole Lühn, Zaid El-Mekki, M. Honore, Silvia Armini
Publikováno v:
Microelectronic Engineering. 88:701-704
In this paper we report on Cu plating of through-silicon-vias (TSV-s) using in-house made acidic Cu bath with model additives (SPS, PEG, and JGB). Although the model additives might not be as potent as commercial additives, they have been studied in
Publikováno v:
Journal of Materials Science. 47:6497-6504
Different milling strategies for the structural characterization of through silicon vias on silicon wafers and in stacked dies are examined. For investigation of the filling quality, the most appropriate analysis technique is dual beam focused ion be
Autor:
Alexis Franquet, S. Garaud, Guy Vereecke, F. Sinapi, Thierry Conard, Youssef Travaly, I. Hoflijk, Bert Brijs, Chao Zhao, Henny Volders, Zsolt Tokei, Hugo Bender, Chris Drijbooms, Wei-Min Li, D. Vanhaeren, H. Sprey, Alain M. Jonas, Rudy Caluwaerts, L. Carbonell, Alain Moussa
Publikováno v:
Microelectronic Engineering. 84:2460-2465
A ternary WN"xC"y system was deposited in a thermal ALD (atomic layer deposition) reactor from ASM at 300^oC in a process sequence using tungsten hexafluoride (WF"6), triethyl borane (TEB) and ammonia (NH"3) as precursors. The WC"x layers were deposi
Autor:
Chris Drijbooms, Denis Shamiryan, Peter Verheyen, Hans Weijtmans, Philip Absil, Chantal J. Arena, R. Wise, Sophie Passefort, Akira Inoue, Matty Caymax, John McCormack, Haruyuki Sorada, Alain Moussa, Roger Loo, Geert Eneman, Vladimir Machkaoutsan, Pierre Tomasini, Stephane Godny, Rita Rooyackers, Stefan Jakschik, Frederik Leys, Christian Walczyk, Byeong Chan Lee, Sangjin Hyun, Tinne Delande, Hugo Bender, Luc Geenen
Publikováno v:
ECS Transactions. 3:453-465
Selective Epitaxial Growth of SiGe and/or Si-cap/SiGe heterostructures offer an elegant way to improve pMOS device performance. This paper discusses some important challenges and characteristics of the corresponding epi process. Loading effects are s
Autor:
Chris Drijbooms, Laurens F Kwakman, Alexis Franquet, Hugo Bender, Wilfried Vandervorst, Trudo Clarysse, Brigitte Parmentier
Publikováno v:
Semiconductor Science and Technology. 30:114015
Focused ion beams (FIBs) are widely applied during manufacturing and for failure analysis, as a preparation tool for cross sectional scanning electron microscopy or for the extraction of lamellae for (scanning) transmission electron microscopy invest