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pro vyhledávání: '"Chris Chun-Chih Chung"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 959-963 (2019)
A self-limited low-temperature trimming process is demonstrated without surface morphology degradation. It shows great potential to control the trimming process with a large process window (400-900 s). Subthreshold characteristics are improved and Io
Externí odkaz:
https://doaj.org/article/e69c821e08c24f968fabc0c00770f385
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 959-963 (2019)
A self-limited low-temperature trimming process is demonstrated without surface morphology degradation. It shows great potential to control the trimming process with a large process window (400-900 s). Subthreshold characteristics are improved and Io
Publikováno v:
IEEE Transactions on Electron Devices. 65:756-762
We had successfully suspended the vertically stacked cantilever (VSC) nanowire by two approaches: 1) inserting a SiN layer as reinforcement to sustain the gate-stack thermal budget and 2) adopting high- ${k}$ metal gate low-temperature process and re
Publikováno v:
IEEE Transactions on Electron Devices. Feb2018, Vol. 65 Issue 2, p756-762. 7p.