Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Chris C. Hobbs"'
Publikováno v:
AIP Conference Proceedings.
The performance of deep submicron devices depends heavily on the electrical properties of the gate dielectric. Electrical properties such as dielectric constant, leakage current density, interface trap and oxide trapped charge, dielectric integrity,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cef59734706e01163ee93e941e443d00
https://doi.org/10.1063/1.1354380
https://doi.org/10.1063/1.1354380
Publikováno v:
AIP Conference Proceedings; 2001, Vol. 550 Issue 1, p105, 8p