Zobrazeno 1 - 10
of 648
pro vyhledávání: '"Chrastina, D."'
Autor:
Severin, B., Lennon, D. T., Camenzind, L. C., Vigneau, F., Fedele, F., Jirovec, D., Ballabio, A., Chrastina, D., Isella, G., de Kruijf, M., Carballido, M. J., Svab, S., Kuhlmann, A. V., Braakman, F. R., Geyer, S., Froning, F. N. M., Moon, H., Osborne, M. A., Sejdinovic, D., Katsaros, G., Zumbühl, D. M., Briggs, G. A. D., Ares, N.
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, witho
Externí odkaz:
http://arxiv.org/abs/2107.12975
Autor:
Tuktamyshev, A., Fedorov, A., Bietti, S., Vichi, S., Zeuner, K. D., Jöns, K. D., Chrastina, D., Tsukamoto, S., Zwiller, V., Gurioli, M., Sanguinetti, S.
Publikováno v:
Applied Physics Letters 118, 133102 (2021)
We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth rate thanks t
Externí odkaz:
http://arxiv.org/abs/2101.12237
Akademický článek
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Autor:
Drichko, I. L., Dmitriev, A. A., Malysh, V. A., Smirnov, I. Yu., Galperin, Yu. M., von Känel, H., Kummer, M., Isella, G., Chrastina, D.
Publikováno v:
JETP 126, 246 (2018)
The hopping ac conductance, which is realized at the transverse conductance minima in the regime of the integer Hall effect, has been measured using a combination of acoustic and microwave methods. Measurements have been made in the p-GeSi/Ge/GeSi st
Externí odkaz:
http://arxiv.org/abs/1812.04870
Autor:
Drichko, I. L., Dmitriev, A. A., Malysh, V. A., Smirnov, I. Yu., von Känel, H., Kummer, M., Chrastina, D., Isella, G.
The effective g-factor of 2D holes in modulation doped \mbox{p-SiGe/Ge/SiGe} structures was studied. The AC conductivity of samples with hole densities from $3.9 \times 10^{11}$~to $6.2 \times 10^{11}~\text{cm}^{-2}$ was measured in perpendicular mag
Externí odkaz:
http://arxiv.org/abs/1804.03876
Autor:
Vanacore, G. M., Chaigneau, M., Barrett, N., Bollani, M., Boioli, F., Salvalaglio, M., Montalenti, F., Manini, N., Caramella, L., Biagioni, P., Chrastina, D., Isella, G., Renault, O., Zani, M., Sordan, R., Onida, G., Ossikovski, R., Drouhin, H. -J., Tagliaferri, A.
Publikováno v:
Physical Review B 88, 115309 (2013)
Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoidi
Externí odkaz:
http://arxiv.org/abs/1306.1412
Autor:
Stoffel, M., Malachias, A., Merdzhanova, T., Cavallo, F., Isella, G., Chrastina, D., von Kaenel, H., Rastelli, A., Schmidt, O. G.
We investigate the effect of strain on the etching rate of two SiGe wet etchants, namely NH4OH:H2O2 and H2O2. For both etchants, we found that there is no appreciable strain selectivity, i.e. the etching rates do not depend on the actual strain state
Externí odkaz:
http://arxiv.org/abs/0801.4211
Publikováno v:
J. Appl. Phys. 94 (10) 6583-6590 (2003)
A powerful method for mobility spectrum analysis is presented, based on Bryan's maximum entropy algorithm. The Bayesian analysis central to Bryan's algorithm ensures that we avoid overfitting of data, resulting in a physically reasonable solution. Th
Externí odkaz:
http://arxiv.org/abs/cond-mat/0308429
Publikováno v:
In Microelectronic Engineering 5 March 2016 153:88-91
Publikováno v:
In Microelectronic Engineering 15 June 2015 141:256-260