Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Chr. Klatt"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :75-81
Silicon nitride phases are of technological interest for example as gate dielectric in thin film and field effect transistors. The present study compares nitrogen with ammonia plasma immersion ion implantation (PIII) of silicon before and after an an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eade146656e7210617c14499c9f37a39
https://doi.org/10.1016/s0168-583x(99)00866-6
https://doi.org/10.1016/s0168-583x(99)00866-6
Autor:
J.H.R. dos Santos, Pedro Luis Grande, G. de M. Azevedo, Johnny Ferraz Dias, Chr. Klatt, Moni Behar, S. Kalbitzer
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :145-149
In the present work we report on measurements of the electronic stopping power of 1.2 MeV 7Li+ ions channeled through the Si 〈1 0 0〉 axis as a function of the incident angle between −1.2° and 1.2°. The experiments were done using the Rutherfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcf3163cf4bddd73a0cc2a1980230cb1
https://doi.org/10.1016/s0168-583x(99)00971-4
https://doi.org/10.1016/s0168-583x(99)00971-4
Autor:
D. Ila, E. K. Williams, C. C. Smith, Dale K. Hensley, S Kalbitzer, Chr. Klatt, David B. Poker
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 148:1012-1016
In this work, we demonstrate that by post-implantation bombardment of 2.0 MeV Au-implanted suprasil by MeV heavy ions such as silicon, one can assist the formation of Au nanoclusters. We will also demonstrate the relationship between the energy depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68f1de22bd52b814aded7560fa778a99
https://doi.org/10.1016/s0168-583x(98)00759-9
https://doi.org/10.1016/s0168-583x(98)00759-9
Autor:
David B. Poker, S Kalbitzer, Daryush Ila, Dale K. Hensley, E. K. Williams, Robert Lee Zimmerman, Chr. Klatt
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 148:1064-1068
Implantation of 2 MeV ions of Au or Cu into single crystals of MgO (1 0 0) at room temperature results in the spontaneous formation of metallic nanoclusters for implantation fluences above a threshold value. The formation and growth of these clusters
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::217e1440a325ad89d4b723e01c1de5c0
https://doi.org/10.1016/s0168-583x(98)00741-1
https://doi.org/10.1016/s0168-583x(98)00741-1
Autor:
Robert Lee Zimmerman, C Drevet, S Kalbitzer, Daryush Ila, Dale K. Hensley, Chr. Klatt, K. Bhat, A.L. Evelyn, Nathalie Just, David B. Poker
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 148:1141-1145
MeV ions passing through polymer films modify their electrical and optical properties and these changes are related to changes in the chemical structures of the polymers. The effects of certain cross linking enhancers, such as sulfur and other pendan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b971d1e38e6038528b3772b356b46b3b
https://doi.org/10.1016/s0168-583x(98)00858-1
https://doi.org/10.1016/s0168-583x(98)00858-1
Autor:
G. de M. Azevedo, Pedro Luis Grande, Johnny Ferraz Dias, S. Kalbitzer, Moni Behar, Chr. Klatt
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 148:164-167
We report measurements on the electronic stopping power of 7 Li ions along the 〈1 0 0〉 Si direction in the energy region between 1 and 8 MeV. The measurements were carried out using the standard RBS/Channeling technique with SIMOX targets. The re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03ce475ee7695eda75a46013c1273084
https://doi.org/10.1016/s0168-583x(98)00675-2
https://doi.org/10.1016/s0168-583x(98)00675-2
Autor:
S. Kalbitzer, R. Stoll, G. de M. Azevedo, Pedro Luis Grande, Johnny Ferraz Dias, J.H.R. dos Santos, Chr. Klatt, Moni Behar
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :132-136
We present measurements of the electronic stopping power in the 0.8–2.0 MeV energy range of 4 He 2+ ions channeled through the Si〈1 0 0〉 axis as a function of the incident angle. The measurements were carried out using the Rutherford Backscatte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7a4234270dc2a1ca295a5b247f77df9
https://doi.org/10.1016/s0168-583x(97)00834-3
https://doi.org/10.1016/s0168-583x(97)00834-3
Autor:
S. Kalbitzer, Pedro Luis Grande, Moni Behar, Henri Ivanov Boudinov, J.H.R. dos Santos, Chr. Klatt, R. Stoll
Publikováno v:
Physical Review B. 55:13651-13657
We report measurements of $^{10}\mathrm{B}$ stopping powers in random and Si 〈100〉 directions. The measurements were carried out in the 500\char21{}9000 keV energy range for the channeling case and in the 300\char21{}800 keV for the random one. F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::280758251db6498856623b2aea436154
https://doi.org/10.1103/physrevb.55.13651
https://doi.org/10.1103/physrevb.55.13651
Autor:
Pedro Luis Grande, R. Stoll, Moni Behar, Henri Ivanov Boudinov, J.H.R. dos Santos, Chr. Klatt, S. Kalbitzer
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :107-111
In the present work we report measurements of 10B stopping powers in channeled Si 〈100〉 direction. The measurements were carried out with a SIMOX sample in the energy range of 500–9000 keV using a backscattering method. In the lower energy regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cb33b3db86b80e659b61c969799d3ca
https://doi.org/10.1016/s0168-583x(96)00861-0
https://doi.org/10.1016/s0168-583x(96)00861-0
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :570-573
We have demonstrated that the post bombardment of 3.6 MeV Au implanted suprasil by 1.2 MeV boron, 2.0 MeV boron and 0.9 MeV alpha particles can induce the formation of Au nanoclusters. We have also demonstrated that post bombardment increases the ann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::116f284f05fa389bfa4146989bab7bac
https://doi.org/10.1016/s0168-583x(96)01127-5
https://doi.org/10.1016/s0168-583x(96)01127-5