Zobrazeno 1 - 10
of 97
pro vyhledávání: '"Chowdhury, Debasree"'
Publikováno v:
In Current Applied Physics December 2024 68:267-274
Autor:
Barman, Pintu, Deka, Anindita, Mondal, Shyamal, Chowdhury, Debasree, Bhattacharyya, Satyaranjan
Surface morphology of size-selected silver nanocluster films grown by dc magnetron sputtering has been investigated by means of an atomic force microscopy (AFM). From the height-height correlation functions ( HHCF) obtained from corresponding AFM ima
Externí odkaz:
http://arxiv.org/abs/1911.09381
Autor:
Chowdhury, Debasree, Ghose, Debabrata
Ion sputtering induced nanoscale pattern formation on Ge (001) surface by 500 eV Ar+ bombardment has been investigated for a wide range of ion incidence angles at temperature of 300 deg.C. A fourfold symmetric topography forms in the angular regime 0
Externí odkaz:
http://arxiv.org/abs/1910.04159
Autor:
Chowdhury, Debasree, Ghose, Debabrata
Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar+ bombardment at target temperature of 450 degC for a wide range of incident angles. Highly ordered ripple formati
Externí odkaz:
http://arxiv.org/abs/1605.01249
Topography evolution of Si(100) surface due to oblique incidence low energy ion beam sputtering (IBS) is investigated. Experiments were carried out at different elevated temperatures from 20$^{\circ}$C to 450$^{\circ}$C and at each temperature, the i
Externí odkaz:
http://arxiv.org/abs/1604.02068
Autor:
Mondal, Shyamal, Chowdhury, Debasree
Publikováno v:
In Surface & Coatings Technology 15 July 2020 393
Autor:
Chowdhury, Debasree, Ghose*, Debabrata, Mollick, Safiul Alam, Satpati, Biswarup, Bhattacharyya, Satya Ranjan
Ripple formation driven by Ehrlich-Schwoebel barrier is evidenced for normal incidence 30 eV Ar+ bombardment of GaAs (001) surface at elevated target temperature. The pattern follows the symmetry of the bombarded crystal surface. The results can be d
Externí odkaz:
http://arxiv.org/abs/1407.4670
Autor:
Ferrando Giulio, Gardella Matteo, Zambito Giorgio, Barelli Matteo, Chowdhury Debasree, Giordano Maria Caterina, de Mongeot Francesco Buatier
Publikováno v:
EPJ Web of Conferences, Vol 287, p 05028 (2023)
Header Two-dimensional (2D) Transition Metal Dichalcogenide semiconductors (TMDs) are a promising platform in view of developing a novel generation of optoelectronics devices and renewable photon to energy conversion technologies. However new ultra-c
Externí odkaz:
https://doaj.org/article/eb9e42327bb2477ea2a7b07de32f2cc6
Autor:
Chowdhury, Debasree, Ghose, Debabrata
Publikováno v:
In Surfaces and Interfaces December 2019 17
Autor:
Josh, Chayanika, Choudhuri, Madhumita, Raya, Mallar, Chowdhury, Debasree, Chattopadhyay, P.P., Datta, Alokmay
Publikováno v:
In Materials Today: Proceedings 2018 5(3) Part 3:10143-10148