Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Chouksey Siddharth"'
Autor:
Manan Mehta, Merrill Devin, S. Ghose, X. Weng, H. Li, Anand Portland Murthy, Ashish Agrawal, Jessica M. Torres, Matthew V. Metz, A. A. Oni, S. Vishwanath, Chouksey Siddharth, Jack Portland Kavalieros, W. Rachmady
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
For the first time, we report a short channel high performance, gate-all-around strained Si 0.4 Ge 0.6 nanosheet PMOSFET with aggressively scaled dimensions. We demonstrate realization of s-Si 0.4 Ge 0.6 nanosheet with 5nm thickness and device with L
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35498837c30fca8c31f46f4d41660aa6
https://doi.org/10.1109/iedm13553.2020.9371933
https://doi.org/10.1109/iedm13553.2020.9371933
Autor:
Ibrahim Ban, Robert L. Bristol, Han Wui Then, Pratik Koirala, Tronic Tristan A, Kimin Jun, Rajat Kanti Paul, Nicole K. Thomas, Chouksey Siddharth, Hafez Walid M, D. Staines, W. Rachmady, P. Agababov, Fischer Paul B, T. Talukdar, Kevin Lin, T. Michaelos, Huang Cheng-Ying, Brandon Holybee, B. Krist, Marko Radosavljevic, Manish Chandhok, J. Peck
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We expand on our work in [1] by demonstrating both Si P- and NMOS finfet transistors monolithically integrated with GaN transistors on 300mm Si(111) wafers using 3D integration. With the Si finfet architecture, we are able to take advantage of the fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5cdd33209407d260c3d7c77c1e3104f
https://doi.org/10.1109/vlsitechnology18217.2020.9265093
https://doi.org/10.1109/vlsitechnology18217.2020.9265093
Autor:
W. Rachmady, Ashish Agrawal, Huang Cheng-Ying, B. Krist, Matthew V. Metz, Chouksey Siddharth, Jack Portland Kavalieros, A. A. Oni, Jessica M. Torres, Kimin Jun, Rajat Kanti Paul, Seung Hoon Sung, Hui Jae Yoo, T. Talukdar, G. Elbaz, Wong Lawrence D, Mueller Brennen, Robert B. Turkot, Fischer Paul B, P. Sears, Benjamin Chu-Kung, G. Dewey, Phan Anh, T. Michaelos
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We report a short channel high performance Ge PMOS integrated with Si NMOS in sequential monolithic 3D stacking. A layer transfer Ge PMOS with record I ON = 497 μA/μm at I OFF = 8nA/μm and I ON = 630 μA/μm at I OFF = 100nA/μm and V DS = -0.5V i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75e7b3524af2d1b2c9ac22c6739970bb
https://doi.org/10.1109/iedm19573.2019.8993626
https://doi.org/10.1109/iedm19573.2019.8993626
Autor:
Sansaptak Dasgupta, Robert L. Bristol, D. Staines, Kimin Jun, Fischer Paul B, J. Peck, Rajat Kanti Paul, Hafez Walid M, Nicole K. Thomas, Ibrahim Ban, Huang Cheng-Ying, Mueller Brennen, W. Rachmady, T. Michaelos, Kevin Lin, Marko Radosavljevic, Chouksey Siddharth, Manish Chandhok, Nidhi Nidhi, Tronic Tristan A, B. Krist, Han Wui Then, P. Agababov, Brandon Holybee, T. Talukdar
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We have demonstrated industry’s first 300mm 3D heterogeneous integration of high performance, low-leakage high-K dielectric metal gate enhancement-mode (e-mode) GaN NMOS and Si PMOS transistors on 300mm high-resistivity (HR) Si(111) substrate, enab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::962c86068c20b2fc0961aaf1161bb031
https://doi.org/10.1109/iedm19573.2019.8993583
https://doi.org/10.1109/iedm19573.2019.8993583
Autor:
Chouksey, Siddharth.
Thesis (Ph. D.)--University of Florida, 2009.
Title from title page of source document. Document formatted into pages; contains 100 pages. Includes vita. Includes bibliographical references.
Title from title page of source document. Document formatted into pages; contains 100 pages. Includes vita. Includes bibliographical references.
Externí odkaz:
http://purl.fcla.edu/fcla/etd/UFE0041075
Akademický článek
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Autor:
Chouksey, Siddharth1, Fossum, Jerry G.1 fossum@tec.ufl.edu, Behnam, Ashkan1, Agrawal, Shishir1, Mathew, Leo2
Publikováno v:
IEEE Transactions on Electron Devices. Oct2009, Vol. 56 Issue 10, p2348-2353. 6p. 2 Charts, 3 Graphs.
Autor:
Chouksey, Siddharth1 sidc@tec.ufl.edu, Fossum, Jerry G.1 fossum@tec.ufl.edu
Publikováno v:
IEEE Transactions on Electron Devices. Mar2008, Vol. 55 Issue 3, p796-802. 7p. 2 Diagrams, 1 Chart, 5 Graphs.