Zobrazeno 1 - 3
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pro vyhledávání: '"Chou-Sheng Wang"'
Autor:
Chou-Sheng Wang, 王周昇
90
In recent years, InGaP/InGaAs/GaAs PHEMTs (Pseudomorphic High Electron Mobility Transistor) have been researched and developed continually due to its advantage of low noise application. However, the study of stressed devices characteristics i
In recent years, InGaP/InGaAs/GaAs PHEMTs (Pseudomorphic High Electron Mobility Transistor) have been researched and developed continually due to its advantage of low noise application. However, the study of stressed devices characteristics i
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/ekg265
Autor:
Chang-Luen Wu, Chou-Sheng Wang, Chieh-Ping Chang, Hou-Kuei Huang, Yeong-Her Wang, Chian-Sern Chang
Publikováno v:
IEEE Transactions on Electron Devices. 52:1706-1712
The degradation mechanisms of the noise characteristics of InGaP-gated low-noise pseudomorphic high-electron mobility transistors (PHEMTs) under accelerated stresses through dc and thermal stresses are investigated. The devices used were metal-organi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4e639216d5d37d6b6cb185b56d293bb
https://doi.org/10.1109/ted.2005.852176
https://doi.org/10.1109/ted.2005.852176
Autor:
Hou-Kuei Huang1, Chou-Sheng Wang1, Chieh-Ping Chang1, Yeong-Her Wang1 YHW@eembox.ncku.edu.tw, Chang-Luen Wu2, Chian-Sern Chang2
Publikováno v:
IEEE Transactions on Electron Devices. Aug2005, Vol. 52 Issue 8, p1706-1712. 7p.