Zobrazeno 1 - 10
of 139
pro vyhledávání: '"Chou, Fangcheng"'
Autor:
Yen, Yun, Chiu, Cheng-Li, Lin, Ping-Hui, Sankar, Raman, Chou, Fangcheng, Chuang, Tien-Ming, Guo, Guang-Yu
Dirac semimetals (DSMs) are three dimensional analogue to graphene with symmety enforced bulk Dirac nodes. Among various DSMs, ZrSiS has been attracting more interests recently, due to its three dimensional Dirac nodal line protected by the nonsymmor
Externí odkaz:
http://arxiv.org/abs/1912.07002
Autor:
Choi, Y. S., Lee, C. H., Lee, S., Yoon, Sungwon, Lee, W. -J., Park, J., Ali, Anzar, Singh, Yogesh, Orain, Jean-Christophe, Kim, Gareoung, Rhyee, Jong-Soo, Chen, Wei-Tin, Chou, Fangcheng, Choi, Kwang-Yong
Publikováno v:
Phys. Rev. Lett. 122, 167202 (2019)
We report on magnetization $M(H)$, dc/ac magnetic susceptibility $\chi(T)$, specific heat $C_{\mathrm{m}}(T)$ and muon spin relaxation ($\mu$SR) measurements of the Kitaev honeycomb iridate Cu$_2$IrO$_2$ with quenched disorder. In spite of the chemic
Externí odkaz:
http://arxiv.org/abs/1811.07002
Autor:
Iaia, Davide, Wang, Chang-Yan, Maximenko, Yulia, Walkup, Daniel, Sankar, R., Chou, Fangcheng, Lu, Yuan-Ming, Madhavan, Vidya
Publikováno v:
Phys. Rev. B 99, 155116 (2019)
In addition to novel surface states, topological insulators can also exhibit robust gapless states at crystalline defects. Step edges constitute a class of common defects on the surface of crystals. In this work we establish the topological nature of
Externí odkaz:
http://arxiv.org/abs/1809.10689
Autor:
Su, Chih-Chuan, Li, Chi-Sheng, Wang, Tzu-Cheng, Guan, Syu-You, Sankar, Raman, Chou, Fangcheng, Chang, Chia-Seng, Lee, Wei-Li, Guo, Guang-Yu, Chuang, Tien-Ming
Publikováno v:
New Journal of Physics 20, 103025 (2018)
Dirac nodal line semimetals represent a new state of quantum matters in which the electronic bands touch to form a closed loop with linear dispersion. Here, we report a combined study on ZrSiS by density functional theory calculation, scanning tunnel
Externí odkaz:
http://arxiv.org/abs/1808.08367
Autor:
Li§, Yang, Wang§, Tianmeng, Wang§, Han, Li, Zhipeng, Chen, Yanwen, West, Damien, Sankar, Raman, Ulaganathan, Rajesh K., Chou, Fangcheng, Wetzel, Christian, Xu, Cheng-Yan, Zhang, Shengbai, Shi, Su-Fei
InSe, a newly rediscovered two-dimensional (2D) semiconductor, possesses superior electrical and optical properties as a direct bandgap semiconductor with high mobility from bulk to atomically thin layers, drastically different from transition metal
Externí odkaz:
http://arxiv.org/abs/1807.08862
Autor:
Gao, Shang, Flicker, Felix, Sankar, Raman, Zhao, He, Ren, Zheng, Rachmilowitz, Bryan, Balachandar, Sidhika, Chou, Fangcheng, Burch, Kenneth, Wang, Ziqiang, van Wezel, Jasper, Zeljkovic, Ilija
A charge density wave (CDW) is one of the fundamental instabilities of the Fermi surface occurring in a wide range of quantum materials. In dimensions higher than one, where Fermi surface nesting can play only a limited role, the selection of the par
Externí odkaz:
http://arxiv.org/abs/1806.09665
Autor:
Shao, Yinming, Sun, Zhiyuan, Wang, Ying, Xu, Chenchao, Sankar, R., Breindel, Alex J., Cao, Chao, Fogler, M. M., Chou, Fangcheng, Li, Zhiqiang, Timusk, T., Maple, M. Brian, Basov, D. N.
Publikováno v:
PNAS Jan 2019, 116 (4) 1168-1173
Using polarized optical and magneto-optical spectroscopy, we have demonstrated universal aspects of electrodynamics associated with Dirac nodal-lines. We investigated anisotropic electrodynamics of NbAs$_2$ where the spin-orbit interaction triggers e
Externí odkaz:
http://arxiv.org/abs/1806.01996
Autor:
Li§, Yang, Wang§, Tianmeng, Wu§, Meng, Cao, Ting, Chen, Yanwen, Sankar, Raman, Ulaganathan, Rajesh K., Chou, Fangcheng, Wetzel, Christian, Xu, Cheng-Yan, Louie, Steven G., Shi, Sufei
InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We, for the fi
Externí odkaz:
http://arxiv.org/abs/1801.07538
Autor:
Hosen, M. Mofazzel, Dimitri, Klauss, Nandy, Ashis K., Aperis, Alex, Sankar, Raman, Dhakal, Gyanendra, Maldonado, Pablo, Kabir, Firoza, Sims, Christopher, Chou, Fangcheng, Kaczorowski, Dariusz, Durakiewicz, Tomasz, Oppeneer, Peter M., Neupane, Madhab
Publikováno v:
Nature Communications 9, 3002 (2018)
Among the quantum materials that gained interest recently are the topological Dirac/Weyl semimetals, where conduction and valence bands touch at points in reciprocal (k)-space, and the Dirac nodal-line semimetals, where these bands touch along a line
Externí odkaz:
http://arxiv.org/abs/1711.07390
Autor:
Dai, Wenqing, Richardella, Anthony, Du, Renzhong, Zhao, Weiwei, Liu, Xin, Liu, C. X., Huang, Song-Hsun, Sankar, Raman, Chou, Fangcheng, Samarth, Nitin, Li, Qi
Publikováno v:
Scientific Reports 7, 7631 (2017)
Proximity-effect-induced superconductivity was studied in epitaxial topological insulator Bi2Se3 thin films grown on superconducting NbSe2 single crystals. A point contact spectroscopy (PCS) method was used at low temperatures down to 40 mK. An induc
Externí odkaz:
http://arxiv.org/abs/1708.00998