Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Choong Yong Sohn"'
Autor:
Yong-Hae Kim, Hye Yong Chu, Choong-Yong Sohn, Choong-Heui Chung, Jin Ho Lee, Sang-Hee Ko Park, Young-Wook Ko
Publikováno v:
Thin Solid Films. 491:294-297
Indium tin oxide (ITO) films were prepared by radio frequency magnetron sputtering at room temperature, for use as a cathode in a transparent organic light-emitting diode (TOLED). To minimize damage to the TOLED by the ITO sputtering process, the tar
Autor:
Bong-Chul Kim, Choong-Yong Sohn, Yong-Hae Kim, Yoon-Ho Song, Young-Wook Ko, Chi-Sun Hwang, Choong-Heui Chung, Jin Ho Lee
Publikováno v:
Thin Solid Films. 440:169-173
We have made an excimer laser annealed poly-Si thin film transistor (TFT). The stress of the poly-Si films crystallized by excimer laser annealing is studied by Raman spectroscopy. The transverse-optic phonon frequency is independent of the excimer l
Autor:
Gi-Wook Kang, Namheon Lee, Jongtae Lim, Chi-Sun Hwang, Yong-Hae Kim, Young Wook Ko, Bong-Chul Kim, Choong-Yong Sohn, Yoon-Ho Song, Young-Joo Ahn, Changhee Lee, Choong-Heui Chung, Jin Ho Lee
Publikováno v:
Thin Solid Films. 426:246-249
Stable organic white light-emitting diodes are successfully fabricated by a single organic white emitting layer, which is Bis (2-methyl-8-quinolinato) (triphenylsiloxy) aluminum (III) (SAlq) doped red fluorescent dye of 4-(dicyanomethylene)-2- tert -
Autor:
Yong-Hae Kim, Chi-Sun Hwang, Sun Jin Yun, Choong-Heui Chung, Jin Ho Lee, Choong-Yong Sohn, Young-Wook Ko, Jung Wook Lim
Publikováno v:
IEEE Electron Device Letters. 25:550-552
This letter presents technologies to fabricate ultralow-temperature (< 150 /spl deg/C) polycrystalline silicon thin-film transistor (ULTPS TFT). Sequential lateral solidification is used for crystallization of RF magnetron sputter deposited amorphous
Publikováno v:
MRS Proceedings. 785
The characteristics of dopant activation by sequential lateral solidification in poly-Si films is investigated using sheet resistance measurement and Raman measurement. Sheet resistance of n+ and p+ doped poly-Si films decreases exponentially as the
Publikováno v:
Japanese Journal of Applied Physics. 45:5675
The heights of ridges, which are formed after crystallizing amorphous Si films, vary linearly to the initial film thicknesses. Post laser treatments on ridges have an effect of leveling the heights of ridges and lead to improved thin-film transistor
Publikováno v:
Applied Physics Letters. 86:093504
The performance of transparent organic light-emitting diodes (OLEDs) can be substantially improved by increasing the rf sputtering power in the deposition of an indium tin oxide cathode. This dependence of device performance on sputtering power is qu
Autor:
Chun Min Doo, In‐Jae Chung, Choong Yong Sohn, Sung Hak Jo, Cho Hyung Nyuck, Yong Ho Jang, Binn Kim, Soo Young Yoon, Nam Wook Cho, Chang-Dong Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 36:348
This is the first report on real XGA AMLCD for NBPC with highly stable integrated gate driver circuits using a-Si TFT. The new circuit has been designed with dual-pull down structure for high reliability and has been working for over 2,000 hours at 6
Publikováno v:
Electrochemical and Solid-State Letters. 7:G185
A two-layer oxide comprised of SiO 2 and Al 2 O 3 grown at 150°C by atomic layer deposition (ALD) was investigated as the gate insulator for ultralow temperature poly-Si thin-film transistors (ULTPS TFTs). The two-layer gate insulator satisfied good
Publikováno v:
Applied Physics Letters; 2/28/2005, Vol. 86 Issue 9, p093504, 3p, 4 Graphs