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pro vyhledávání: '"Choon-W. Nahm"'
Autor:
Choon‑W. Nahm
Publikováno v:
Journal of the Korean Ceramic Society. 57:65-72
This study elucidates the effect of sintering temperature on the nonlinearity and surge degradation characteristics of Mn3O4/Nb2O5/Er2O3–doped ZnO–V2O5-based varistors. With increasing sintering temperature, the average grain size increased from
Autor:
Choon-W. Nahm
Publikováno v:
Journal of the Korean Ceramic Society. 56:84-90
Autor:
Choon-W. Nahm
Publikováno v:
Journal of the Korean Ceramic Society. 55:504-509
Autor:
Choon-W. Nahm
Publikováno v:
Transactions on Electrical and Electronic Materials. 19:330-336
A stress behavior of non-ohmic properties for ZPCCD (ZnO–Pr1.83–CoO–Cr2O3–Dy2O3) varistors was investigated for different amounts of the doped Er2O3. With the amount of the doped Er2O3 increased, the density of the sintered pellet decreased f
Autor:
Choon-W. Nahm
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:2958-2965
This paper deals with a major effect of ytterbium on microstructure, electrical and dielectric properties, and aging characteristics of ZVM (ZnO–V2O5–Mn3O4) system. With the amount of the ytterbium increased, the average grain size decreased from
Autor:
Choon-W. Nahm
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:17063-17069
ZnO–V2O5–Mn3O4–Bi2O3 (ZVMB) varistor ceramics were sintered at a low temperature range of 800–875 °C, and the microstructure, electrical properties, dielectric characteristics, and DC-accelerated aging behavior were systematically investigat
Autor:
Choon-W. Nahm
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:903-908
In this study, the effect of Bi2O3 doping on microstructure and electrical properties of ZnO–V2O5–Mn3O4 semiconducting ceramics was investigated through the sintering temperature as low as 825 °C. Analysis of the microstructure revealed that ZnO
Autor:
Choon-W. Nahm
Publikováno v:
Journal of Materials Science: Materials in Electronics. 27:9520-9525
This study analyzed the effects of sintering temperature on the microstructure and electrical properties of ZVMND (ZnO–V2O5–MnO2–Nb2O5–Dy2O3) ceramic semiconductors. The average grain size increased from 4.0 to 11.5 μm with the increase of s
Autor:
Choon-W. Nahm
Publikováno v:
Microelectronics Reliability. 55:2299-2305
We introduced the varistor having more powerful surge suppression capability. This research focuses on the effect of sintering time on electrical properties and pulse current degradation of Pr/Co/Cr/Y/Mg co-doped zinc oxide varistors for surge suppre
Autor:
Choon-W. Nahm
Publikováno v:
Journal of Materials Science: Materials in Electronics. 26:10217-10224
The effect of Dy2O3 doping on the microstructure, electrical and dielectric properties of ZnO–V2O5-based varistor ceramics was systematically investigated. The average grain size decreased from 5.5 to 5.2 μm to a small extent until the amount of t