Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Choon-Kun Ryu"'
Autor:
Soon Young Park, Sung Ki Park, Yong Soo Choi, Kee Joon Oh, Choon Kun Ryu, Jung Nam Kim, Ji Hye Han, Seung Seok Pyo, Gyu Hyun Kim, Noh Jung Kwak
Publikováno v:
Solid State Phenomena. :193-196
As a design rule of memory devices is scaled down to sub-100 nm, shallow trench isolation (STI) technology is faced with gap-filling problem in case of CVD oxide and O3-TEOS oxide processes. To overcome the gap-filling problem, a perhydropolysilazane
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07aed8189da1745b2a9d095a37931bb0
https://doi.org/10.4028/www.scientific.net/ssp.145-146.193
https://doi.org/10.4028/www.scientific.net/ssp.145-146.193
Autor:
Gyu An Jin, Su Hyun Lim, Ki Hong Yang, Sang Wook Park, Chul Sik Jang, Young Bog Kim, Sang Deok Kim, Choon Kun Ryu, Sang Hyon Kwak, Seung Cheol Lee, Sun Mi Park, Sung Ki Park
Publikováno v:
Solid State Phenomena. 134:57-60
The SC-1 treatment prior to the O3/TEOS CVD was a very effective method for gapfilling the nanoscale trench of the high aspect ratio by improving the adsorption of TEOS precursors onto the wall oxide. It was found that the interval duration after the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc6f2dac2b986ade09c0f9e199b8caf7
https://doi.org/10.4028/www.scientific.net/ssp.134.57
https://doi.org/10.4028/www.scientific.net/ssp.134.57
Publikováno v:
ECS Transactions. 11:11-18
Recently, NAND flash memory has been used widely for various mobile electronic appliances. Due to strong demand for the non-volatile memory of low cost and high density, the design rule of NAND flash memory has been moving toward sub-50 nm regime. As
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ee72fe5de3e190a9c5a99683412b878
https://doi.org/10.1149/1.2779357
https://doi.org/10.1149/1.2779357
Autor:
Ja-Chun Ku, Jin-Woong Kim, Si-Bum Kim, Jeong-Ho Kim, Choon-Kun Ryu, Su-Youb Lee, Jeong-Mo Hwang, Jae-Seon Yu, Su-Jin Oh, Inazawa Kouichiro
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1401-1410
We intentionally introduced excessive Si during the SiOxNy film deposition in order to increase the etch selectivity-to-SiOxNy for advanced self-aligned contact (SAC) etching in sub-0.25 μm ultralarge scale integration devices. The SiOxNy layer was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1387c4888891db6273a35b7f7dc65be5
https://doi.org/10.1116/1.582362
https://doi.org/10.1116/1.582362
Autor:
Choon Kun Ryu, Judy H. Huang
Publikováno v:
Microelectronic Engineering. 45:393-399
An advanced passivation gap-fill process was developed for sub-micron technology. Excellent gap-fill was achieved using the stack of triethoxyfluorosilane (TEFS) doped fluoro-silicate (FSG) and silicon nitride films. This TEFS-based gap-fill process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad1545269a46c6c44cbbba72093f96f9
https://doi.org/10.1016/s0167-9317(98)00284-6
https://doi.org/10.1016/s0167-9317(98)00284-6
Autor:
Jung Nam Kim, Soon Ju Lee, Hong Ju Suh, Choon Kun Ryu, Won Joon Choi, Bo Kyung Jung, Jae Sung Roh, Sung Ki Park, Chang Hyup Shin
Publikováno v:
MRS Proceedings. 1458
The effect of wet chemical treatment on the magnetic tunneling junction (MTJ) was examined. The tunneling magneto-resistance (TMR) increased and the resistance of anti-parallel state and parallel state decreased when a wet cleaning treatment was carr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d11b9dc8783c5a6e27c5ba3c920b3775
https://doi.org/10.1557/opl.2012.1349
https://doi.org/10.1557/opl.2012.1349
Publikováno v:
MRS Proceedings. 1157
As the design rule of memory devices is scaled down to nanoscale, the number of the CMP process has increased considerably due to the complexity of integration scheme. The CMP for isolation has increased significantly because the isolation process of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db0adb0689c0029158134c018b020674
https://doi.org/10.1557/proc-1157-e10-01
https://doi.org/10.1557/proc-1157-e10-01
Autor:
Seung Cheol Lee, Choon Kun Ryu, Sang Wook Park, Gyu An Jin, Sang Deok Kim, Ki Hong Yang, Sang Hyon Kwak, Su Hyun Lim, Young Jun Kim, Sun Mi Park, Chul Sik Jang, Sung Ki Park
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ced56d1169bed2a84090dfb976ad5078
https://doi.org/10.4028/3-908451-46-9.57
https://doi.org/10.4028/3-908451-46-9.57
Autor:
Chae-Moon Lim, Kae-Dal Kwack, Kwon Hong, Sungwook Park, Jaehyoung Koo, Byung-Seok Lee, Sungki Park, Seung-Woo Shin, Noh-Yeal Kwak, Choon-Kun Ryu, Dong-Ho Lee, Jaehoon Choi, Hyun-Soo Shon
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
As the design rule of NAND-type memory decreases down to sub 100 nm tech regime, one of important problems is the control of the parasitic transistor phenomenon. The parasitic transistor which causes subthreshold kink at high substrate bias is a comm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3812572258de99b8fd0171024ca64984
https://doi.org/10.1109/relphy.2007.369976
https://doi.org/10.1109/relphy.2007.369976
Autor:
Byung-Seok Lee, Noh-Yeal Kwak, Kae-Dal Kwack, Dong-Ho Lee, Sungki Park, Choon-Kun Ryu, Seung-Woo Shin, Moon‐Keun Lee, Hyun-Soo Shon
Publikováno v:
AIP Conference Proceedings.
We present the application of scanning capacitance microscopy (SCM) in the failure analysis of 70nm NAND flash memory device. The SCM results are compared with chemical staining data and the feasibility of using the SCM are discussed. In order to sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec08fe6296451ec37c49166865ae76cf
https://doi.org/10.1063/1.2401577
https://doi.org/10.1063/1.2401577