Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Chongchong Zheng"'
Autor:
Jia Song, Xing Ke, En-Ning Zhang, Shiliang Ji, Zhenyang Zhao, Chongchong Zheng, Zhengning Li, Hai-Yang Zhang
Publikováno v:
ECS Transactions. 108:3-8
As FinFET scales down to advanced technology nodes, Fin profile and Critical Dimension (CD) control are becoming a huge challenge due to the increased number of processes. For a stable wafer-to-wafer CD performance, Advanced Process Control (APC) sys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c47ade50ed8089dd3541d41245bfe6b
https://doi.org/10.1149/10805.0003ecst
https://doi.org/10.1149/10805.0003ecst
Autor:
Xing Ke, Changcheng Jiang, Shiliang Ji, Zhenyang Zhao, Bo Su, Fengmei Li, Chongchong Zheng, Haiyang Zhang
Publikováno v:
2022 China Semiconductor Technology International Conference (CSTIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a990717aefb3678e5f86c2acad290c90
https://doi.org/10.1109/cstic55103.2022.9856861
https://doi.org/10.1109/cstic55103.2022.9856861
Autor:
Jia Song, Xing Ke, Zhengning Li, En-Ning Zhang, Shiliang Ji, Zhenyang Zhao, Chongchong Zheng, Haiyang Zhang
Publikováno v:
ECS Meeting Abstracts. :877-877
The plasma sheath bending effect is widely observed in the wafer edge where the transition area to the edge ring is located. It is due to the electrical discontinuity and results in the difference in Ion Electron Angle Distribution (IEAD) between waf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f1633556d73fb64ae634610c49fb9ac
https://doi.org/10.1149/ma2022-0218877mtgabs
https://doi.org/10.1149/ma2022-0218877mtgabs