Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Chong-Rong Huang"'
Autor:
Xinke Liu, Hsien-Chin Chiu, Chia-Hao Liu, Hsuan-Ling Kao, Chao-Wei Chiu, Hsiang-Chun Wang, Jianwei Ben, Wei He, Chong-Rong Huang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 229-234 (2020)
Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an Al
Externí odkaz:
https://doaj.org/article/362d5c3672b344629959f2ae3d9e6b1c
Autor:
Chia-Hao Liu, Chong-Rong Huang, Hsiang-Chun Wang, Yi-Jie Kang, Hsien-Chin Chiu, Hsuan-Ling Kao, Kuo-Hsiung Chu, Hao-Chung Kuo, Chih-Tien Chen, Kuo-Jen Chang
Publikováno v:
Micromachines, Vol 13, Iss 9, p 1554 (2022)
This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silv
Externí odkaz:
https://doaj.org/article/c5a9587733df45609b8f5c0d64b2b60a
Publikováno v:
Micromachines, Vol 13, Iss 5, p 807 (2022)
A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability. In addition, we selected a 0° angle and low resista
Externí odkaz:
https://doaj.org/article/0521a0ae7bd04f96b064c35ce11a0c8a
Autor:
Chong-Rong Huang, Hsien-Chin Chiu, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Tien Chen, Kuo-Jen Chang
Publikováno v:
Membranes, Vol 11, Iss 11, p 848 (2021)
In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the
Externí odkaz:
https://doaj.org/article/49ca62e52e804ee3b70050b53afafe78
Autor:
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien
Publikováno v:
Membranes, Vol 11, Iss 10, p 727 (2021)
A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selecte
Externí odkaz:
https://doaj.org/article/cde577e1978b498689bb27dddd3f8e06
Autor:
Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Si-Wen Chen
Publikováno v:
Micromachines, Vol 12, Iss 5, p 509 (2021)
Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. This article reports the electrical characteristics of nor
Externí odkaz:
https://doaj.org/article/b8b5f752cffc44528d480ef4a10bf827
Publikováno v:
Energies, Vol 13, Iss 10, p 2479 (2020)
A high threshold voltage (VTH) normally off GaN MISHEMTs with a uniform threshold voltage distribution (VTH = 4.25 ± 0.1 V at IDS = 1 μA/mm) were demonstrated by the selective area ohmic regrowth technique together with an Si-rich LPCVD-SiNx gate i
Externí odkaz:
https://doaj.org/article/b135c85cc143452fa0e2d1988805d04a
Autor:
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh
Publikováno v:
Crystals, Vol 10, Iss 1, p 25 (2020)
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated. In this study, a Zr metal as a gate co
Externí odkaz:
https://doaj.org/article/981afcc907a2470394259a49d461e905
Autor:
Chong-Rong Huang, 黃忠榮
103
The IC packaging and testing semiconductor foundry factory periods are an important industry to promo economic growth in Taiwan. The framework of this research is application of Grey Theory to compare IC packaging and testing semiconductor f
The IC packaging and testing semiconductor foundry factory periods are an important industry to promo economic growth in Taiwan. The framework of this research is application of Grey Theory to compare IC packaging and testing semiconductor f
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/66525047852480879773
Publikováno v:
IEEE Electron Device Letters. 42:1432-1435
In this work, the dual junction-high-electron-mobility-transistor (DJ-HEMT) was investigated. The thin AlGaN was grown between the p-GaN gate and gate metal. In the TCAD simulations, the band gap and electric field were shown in this letter, proving
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67c8cd26f8420d597398ae5db8d5459a
https://doi.org/10.1109/led.2021.3109054
https://doi.org/10.1109/led.2021.3109054