Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Chong-Rong Huang"'
Autor:
Xinke Liu, Hsien-Chin Chiu, Chia-Hao Liu, Hsuan-Ling Kao, Chao-Wei Chiu, Hsiang-Chun Wang, Jianwei Ben, Wei He, Chong-Rong Huang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 229-234 (2020)
Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an Al
Externí odkaz:
https://doaj.org/article/362d5c3672b344629959f2ae3d9e6b1c
Autor:
Chia-Hao Liu, Chong-Rong Huang, Hsiang-Chun Wang, Yi-Jie Kang, Hsien-Chin Chiu, Hsuan-Ling Kao, Kuo-Hsiung Chu, Hao-Chung Kuo, Chih-Tien Chen, Kuo-Jen Chang
Publikováno v:
Micromachines, Vol 13, Iss 9, p 1554 (2022)
This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silv
Externí odkaz:
https://doaj.org/article/c5a9587733df45609b8f5c0d64b2b60a
Publikováno v:
Micromachines, Vol 13, Iss 5, p 807 (2022)
A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability. In addition, we selected a 0° angle and low resista
Externí odkaz:
https://doaj.org/article/0521a0ae7bd04f96b064c35ce11a0c8a
Autor:
Chong-Rong Huang, Hsien-Chin Chiu, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Tien Chen, Kuo-Jen Chang
Publikováno v:
Membranes, Vol 11, Iss 11, p 848 (2021)
In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the
Externí odkaz:
https://doaj.org/article/49ca62e52e804ee3b70050b53afafe78
Autor:
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien
Publikováno v:
Membranes, Vol 11, Iss 10, p 727 (2021)
A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selecte
Externí odkaz:
https://doaj.org/article/cde577e1978b498689bb27dddd3f8e06
Autor:
Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Si-Wen Chen
Publikováno v:
Micromachines, Vol 12, Iss 5, p 509 (2021)
Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. This article reports the electrical characteristics of nor
Externí odkaz:
https://doaj.org/article/b8b5f752cffc44528d480ef4a10bf827
Publikováno v:
Energies, Vol 13, Iss 10, p 2479 (2020)
A high threshold voltage (VTH) normally off GaN MISHEMTs with a uniform threshold voltage distribution (VTH = 4.25 ± 0.1 V at IDS = 1 μA/mm) were demonstrated by the selective area ohmic regrowth technique together with an Si-rich LPCVD-SiNx gate i
Externí odkaz:
https://doaj.org/article/b135c85cc143452fa0e2d1988805d04a
Autor:
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh
Publikováno v:
Crystals, Vol 10, Iss 1, p 25 (2020)
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated. In this study, a Zr metal as a gate co
Externí odkaz:
https://doaj.org/article/981afcc907a2470394259a49d461e905
Publikováno v:
IEEE Electron Device Letters. 42:1432-1435
In this work, the dual junction-high-electron-mobility-transistor (DJ-HEMT) was investigated. The thin AlGaN was grown between the p-GaN gate and gate metal. In the TCAD simulations, the band gap and electric field were shown in this letter, proving
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67c8cd26f8420d597398ae5db8d5459a
https://doi.org/10.1109/led.2021.3109054
https://doi.org/10.1109/led.2021.3109054
Autor:
Hsiang-Chun, Wang, Chia-Hao, Liu, Chong-Rong, Huang, Min-Hung, Shih, Hsien-Chin, Chiu, Hsuan-Ling, Kao, Xinke, Liu
Publikováno v:
Materials (Basel, Switzerland). 15(10)
In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::37c5793134bc2a856f4a8c2dd90adace
https://pubmed.ncbi.nlm.nih.gov/35629530
https://pubmed.ncbi.nlm.nih.gov/35629530