Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Chong-Jhe Sun"'
Autor:
Yi-Wen Lin, Shan-Wen Lin, Bo-An Chen, Chong-Jhe Sun, Siao-Cheng Yan, Guang-Li Luo, Yung-Chun Wu, Fu-Ju Hou
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 480-484 (2023)
In this study, we propose a self-aligned stacked Ge nanowire (NW) p-type gate-all-around field-effect transistor (pGAAFET) on Si nFinFET of single gate complementary FET (CFET). The self-aligned stacked Ge NW pGAAFET on Si nFinFET of single gate CFET
Externí odkaz:
https://doaj.org/article/3577e1f2e6c947749d4160e51b7f0709
Autor:
Chong-Jhe Sun, Yi-Ju Yao, Siao-Cheng Yan, Yi-Wen Lin, Shan-Wen Lin, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 408-412 (2022)
We investigated the ferroelectric properties of self-induced HfGeOx in a HfO2 film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelect
Externí odkaz:
https://doaj.org/article/311a0af233af47548e8ad89f5cbad34c
Autor:
Siao-Cheng Yan, Chong-Jhe Sun, Meng-Ju Tsai, Lun-Chun Chen, Mu-Shih Yeh, Chien-Chang Li, Yao-Jen Lee, Yung-Chun Wu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 589-593 (2020)
Germanium is a promising alternative material for use in advanced technology nodes because it exhibits symmetrical mobility of holes and electrons. Embedded nonvolatile memory (NVM) is essential in electronic devices with integrated circuit (IC) tech
Externí odkaz:
https://doaj.org/article/a389f55f76de47b99c14bd024bcaea31
Autor:
Chong-Jhe Sun, Meng-Ju Tsai, Siao-Cheng Yan, Tzu-Ming Chu, Chieng-Chung Hsu, Chun-Lin Chu, Guang-Li Luo, Yung-Chun Wu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1016-1020 (2020)
We successfully fabricate the Si0.8Ge0.2 channel fin field-effect-transistor (FinFET) with 5 nm ultra-thin fin width and high aspect ratio (~10×) on silicon-on-insulator (SOI) substrate by simple two-step dry etching. In comparison of the convention
Externí odkaz:
https://doaj.org/article/816ae23d20c941b8b184586460b00d2c
Autor:
Chong-Jhe Sun, Chen-Han Wu, Yi-Ju Yao, Shan-Wen Lin, Siao-Cheng Yan, Yi-Wen Lin, Yung-Chun Wu
Publikováno v:
Nanomaterials, Vol 12, Iss 20, p 3712 (2022)
We have demonstrated the method of threshold voltage (VT) adjustment by controlling Ge content in the SiGe p-channel of N1 complementary field-effect transistor (CFET) for conquering the work function metal (WFM) filling issue on highly scaled MOSFET
Externí odkaz:
https://doaj.org/article/cf02dd4bb6654330b7047944a69af126
Autor:
Meng-Ju Tsai, Kang-Hui Peng, Chong-Jhe Sun, Siao-Cheng Yan, Chieng-Chung Hsu, Yu-Ru Lin, Yu-Hsien Lin, Yung-Chun Wu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1133-1139 (2019)
Present work demonstrates the vertically double stacked nanosheet (NS) p-channel polycrystalline silicon (poly-Si) junctionless field-effect transistors (JL-FET) with tri-gate, omega-gate, and gate all around (GAA) structure. These structures offer m
Externí odkaz:
https://doaj.org/article/beb36e72cf9342389ae6efc9c2f0a9f8
Publikováno v:
Nanomaterials, Vol 12, Iss 13, p 2165 (2022)
Ferroelectric fin field-effect transistors with a trench structure (trench Fe-FinFETs) were fabricated and characterized. The inclusion of the trench structures improved the electrical characteristics of the Fe-FinFETs. Moreover, short channel effect
Externí odkaz:
https://doaj.org/article/6424439ff9754cffb491f05f8cebcd18
Autor:
Siao-Cheng Yan, Chen-Han Wu, Chong-Jhe Sun, Xin-Chan Zhong, Chih-Siang Chang, Hao-Kai Peng, Yung-Hsien Wu, Yung-Chun Wu
Publikováno v:
IEEE Electron Device Letters. 44:44-47
Autor:
Shan-Wen Lin, Guang-Li Luo, Chien-Ting Wu, Yung-Chun Wu, Siao-Cheng Yan, Fu-Ju Hou, H.-C. Chang, Chong-Jhe Sun, Yi-Wen Lin, Yu-Hsien Huang
Publikováno v:
IEEE Electron Device Letters. 42:1727-1730
We propose that the use of tightly stacked three-dimensional (3D) diamond-shaped Ge nanowire (NW) gate-all-around field-effect transistor (Ge-NW GAAFET) is a feasible approach to continuous scaling. The proposed devices with the Al2O3 dielectric exhi
Autor:
Ya-Han Chen, Yung-Hsien Wu, Guan-Min Lan, Chen-Han Wu, Hao-Kai Peng, Yung-Chun Wu, Siao-Cheng Yan, Chong-Jhe Sun, Yu-Hsien Lin
Publikováno v:
IEEE Electron Device Letters. 42:1307-1310
We fabricated the HfZrO2 (HZO) ferroelectric fin field-effect transistors (Fe-FinFET) with fin width of 60 nm and gate length of 100 nm for ferroelectric nonvolatile memory operations. The fabricated Fe-FinFET exhibited a large memory window (MW) of