Enhanced thermoelectric figure of merit in highly-doped silicon nanowires via a corrugated surface modulation

Autor: Yoo, Hyeongseok, Kim, Hyangwoo, Kwak, Hyeon-Tak, Choi, Minkeun, Oh, Kyounghwan, Kim, Yijoon, Kim, Ki Yeong, Lee, Seungho, Kong, Byoung Don, Park, Ju Hong, Baek, Chang-Ki

Publikováno v: In Nano Energy 15 December 2023 118 Part B

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New tunneling source follower with low 1/f noise and high voltage gain.

Autor: Kim KY; Department of Convergence IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea., Kim H; Future IT Innovation Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea. hyangwookim@postech.ac.kr., Choi M; Department of Convergence IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea., Oh K; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea., Yoo H; Department of Convergence IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea., Kim Y; Department of Convergence IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea., Sol Y; Samsung Electronics, Hwasung, 18448, South Korea., Park S; Samsung Electronics, Hwasung, 18448, South Korea., Lee JK; Samsung Electronics, Hwasung, 18448, South Korea., Baek CK; Department of Convergence IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea.; Future IT Innovation Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea.; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea.

Publikováno v: Scientific reports [Sci Rep] 2024 Oct 09; Vol. 14 (1), pp. 23616. Date of Electronic Publication: 2024 Oct 09.