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pro vyhledávání: '"Choi, Alexander Y."'
The ab-initio theory of charge transport in semiconductors typically employs the lowest-order perturbation theory in which electrons interact with one phonon (1ph). This theory is accepted to be adequate to explain the low-field mobility of non-polar
Externí odkaz:
http://arxiv.org/abs/2207.11376
Autor:
Ardizzi, Anthony J., Choi, Alexander Y., Gabritchidze, Bekari, Kooi, Jacob, Cleary, Kieran A., Readhead, Anthony C., Minnich, Austin J.
The fundamental limits of the microwave noise performance of high electron mobility transistors (HEMTs) are of scientific and practical interest for applications in radio astronomy and quantum computing. Self-heating at cryogenic temperatures has bee
Externí odkaz:
http://arxiv.org/abs/2205.03975
High-field charge transport in semiconductors is of fundamental interest and practical importance. While the \textit{ab initio} treatment of low-field transport is well-developed, the treatment of high-field transport is much less so, particularly fo
Externí odkaz:
http://arxiv.org/abs/2201.11912
High electron mobility transistors are widely used as microwave amplifiers owing to their low microwave noise figure. Electronic noise in these devices is typically modeled by noise sources at the gate and drain. While consensus exists regarding the
Externí odkaz:
http://arxiv.org/abs/2108.03370
Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, and the physical mechanisms governing the microwave noise fi
Externí odkaz:
http://arxiv.org/abs/2105.11571
Publikováno v:
Phys. Rev. Materials 5, 044603 (2021)
The ab-initio theory of low-field electronic transport properties such as carrier mobility in semiconductors is well-established. However, an equivalent treatment of electronic fluctuations about a non-equilibrium steady state, which are readily prob
Externí odkaz:
http://arxiv.org/abs/2009.11395
Publikováno v:
Journal of Applied Physics; 2/28/2022, Vol. 131 Issue 8, p1-7, 7p
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