Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Choe, Hwan Sung"'
Autor:
Shukla, Sudhanshu, Mathew, Sinu, Choe, Hwan Sung, Chugh, Manjusha, Kuhne, Thomas D., Mirhosseini, Hossein, Qihua, Xiong, Wu, Junqiao, Venkatesan, Thirumalai, Sritharan, Thirumany, Ager, Joel W.
The origin of p-type conductivity and the mechanism responsible for low carrier mobility was investigated in pyrite (FeS2) thin films. Temperature dependent resistivity measurements were performed on polycrystalline and nanostructured thin films prep
Externí odkaz:
http://arxiv.org/abs/2106.08401
Autor:
Chen, Yabin, Chen, Chaoyu, Kealhofer, Robert, Liu, Huili, Yuan, Zhiquan, Jiang, Lili, Suh, Joonki, Park, Joonsuk, Ko, Changhyun, Choe, Hwan Sung, Avila, José, Zhong, Mianzeng, Wei, Zhongming, Li, Jingbo, Li, Shushen, Gao, Hongjun, Liu, Yunqi, Analytis, James, Xia, Qinglin, Asensio, Maria C., Wu, Junqiao
Two-dimensional (2D) layered materials emerge in recent years as a new platform to host novel electronic, optical or excitonic physics and develop unprecedented nanoelectronic and energy applications. By definition, these materials are strongly aniso
Externí odkaz:
http://arxiv.org/abs/1805.00418
Autor:
Choe, Hwan Sung
For the last decade, semiconducting nanowires synthesized by bottom-up methods have opened up new opportunities, stimulated innovative scientific research, and led to applications in materials science, electronics, optics, and biology at the nanoscal
Externí odkaz:
http://dissertations.umi.com/gsas.harvard:10799
http://nrs.harvard.edu/urn-3:HUL.InstRepos:11158237
http://nrs.harvard.edu/urn-3:HUL.InstRepos:11158237
Akademický článek
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Akademický článek
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Autor:
Choe, Hwan Sung, Prabhakar, Radhika, Wehmeyer, Geoff, Allen, Frances I, Lee, Woochul, Jin, Lei, Li, Ying, Yang, Peidong, Qiu, Cheng-Wei, Dames, Chris, Scott, Mary, Minor, Andrew, Bahk, Je-Hyeong, Wu, Junqiao
Publikováno v:
Nano letters, vol 19, iss 6
Considerable advances in manipulating heat flow in solids have been made through the innovation of artificial thermal structures such as thermal diodes, camouflages, and cloaks. Such thermal devices can be readily constructed only at the macroscale b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::1cfd66cd8d166cb97cfd6b496c241c7d
https://escholarship.org/uc/item/44v52011
https://escholarship.org/uc/item/44v52011
Autor:
Dong, Kaichen, Choe, Hwan Sung, Wang, Xi, Liu, Huili, Saha, Bivas, Ko, Changhyun, Deng, Yang, Tom, Kyle B, Lou, Shuai, Wang, Letian, Grigoropoulos, Costas P, You, Zheng, Yao, Jie, Wu, Junqiao
Publikováno v:
Dong, K; Choe, HS; Wang, X; Liu, H; Saha, B; Ko, C; et al.(2018). A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition. Small, 14(14). doi: 10.1002/smll.201703621. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/4qf68605
Small (Weinheim an der Bergstrasse, Germany), vol 14, iss 14
Small (Weinheim an der Bergstrasse, Germany), vol 14, iss 14
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Micro-electromechanical (MEM) switches, with advantages such as quasi-zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal-oxide semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::cc4b8cfaaf4a10c2d2c057f21217855b
http://www.escholarship.org/uc/item/4qf68605
http://www.escholarship.org/uc/item/4qf68605
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Autor:
Liu, Huili, Choe, Hwan Sung, Chen, Yabin, Suh, Joonki, Ko, Changhyun, Tongay, Sefaattin, Wu, Junqiao
Publikováno v:
Applied Physics Letters, vol 111, iss 10
Liu, H; Sung Choe, H; Chen, Y; Suh, J; Ko, C; Tongay, S; et al.(2017). Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus. Applied Physics Letters, 111(10). doi: 10.1063/1.4985333. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/5pj773c0
Liu, H; Sung Choe, H; Chen, Y; Suh, J; Ko, C; Tongay, S; et al.(2017). Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus. Applied Physics Letters, 111(10). doi: 10.1063/1.4985333. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/5pj773c0
© 2017 Author(s). Black phosphorus (BP) is a layered semiconductor with a high mobility of up to ∼1000 cm2V-1s-1and a narrow bandgap of ∼0.3 eV, and shows potential applications in thermoelectrics. In stark contrast to most other layered materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5a6121130748c15e7180e3fd54935db8
https://escholarship.org/uc/item/5pj773c0
https://escholarship.org/uc/item/5pj773c0
Autor:
Yan, Hao1, Choe, Hwan Sung2, Nam, SungWoo3, Hu, Yongjie1, Das, Shamik4, Klemic, James F.4, Ellenbogen, James C.4, Lieber, Charles M.1,3
Publikováno v:
Nature. 2/10/2011, Vol. 470 Issue 7333, p240-244. 5p. 1 Diagram, 3 Graphs.