Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Cho-Lun Hsu"'
Autor:
Chien-Ting Wu, Wen-Kuan Yeh, Ming-Yang Li, Yu-Lun Chueh, Chenming Hu, Bo-Wei Wu, Chang-Hsien Lin, Yi-Ju Chen, Min-Cheng Chen, Chun-Chi Chen, Kai-Shin Li, Cho-Lun Hsu, Jia-Min Shieh, Lain-Jong Li, Fu-Liang Yang, Chia-Chin Kevin Cheng
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
A U-shape MoS 2 pMOSFET with 10nm channel and poly-Si source/drain is demonstrated. The fabrication process is simple. Because the Si S/D serves as the nucleation seed for CVD MoS 2 deposition, thin MoS 2 is well deposited in the channel region any w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b4b5d61f297c44d8d3a2406e32f80ed
https://doi.org/10.1109/vlsit.2016.7573375
https://doi.org/10.1109/vlsit.2016.7573375
Autor:
Wen-Kuan Yeh, Bo-Wei Wu, Y. F. Hou, Chun-Hung Lin, Chun-Chi Chen, C. Yi. Lin, Kai-Shin Li, Cho-Lun Hsu, Tung-Yen Lai, Fu-Liang Yang, Ming-Taou Lee, Meiyi Li, Ivy Yang, C. S. Wu, Min-Cheng Chen, J. M. Lu, Y. J. Chen
Publikováno v:
ISCAS
By using sidewall electrode technology, both record small functional TiO 2 selection device (1 × 5 nm2) and HfO 2 based RRAM device (1 × 3 nm2) were for the first time successfully demonstrated in this work, improving the understanding of the switc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26f5957e58c69f1adb42096282e01d7d
https://doi.org/10.1109/iscas.2015.7168651
https://doi.org/10.1109/iscas.2015.7168651
Autor:
Min-Cheng Chen, Fu-Liang Yang, Ming-Taou Lee, Kai-Shin Li, Y. F. Hou, Chun-Hung Lin, Cheng-San Wu, Tung-Yen Lai, Ming-Yang Li, Cho-Lun Hsu, ChiaHua Ho, Ivy Yang, Chun-Kuang Chen, Yi-Ju Chen, Bo-Wei Wu, J. M. Lu, C. Yi. Lin
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
A sidewall electrode technology was successfully developed for the first time in this study, improving the understanding of the working mechanism in an ultra small, functional HfO 2 -based resistive random access memory (RRAM) device (100), and reaso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f889279b3c84ca7cd76d4a1f7b5577e4
https://doi.org/10.1109/vlsit.2014.6894402
https://doi.org/10.1109/vlsit.2014.6894402
Autor:
Hsin-Hau Huang, Min-Cheng Chen, Yi-Ping Hsieh, ChiaHua Ho, Chun-Chi Chen, Cho-Lun Hsu, Meiyi Li, Wen-Cheng Chiu, Lu-Mei Lu, Fu-Liang Yang, Ming-Taou Lee, Kai-Shin Li, Tung-Yen Lai, Bo-Wei Wu, Cheng-San Wu
Publikováno v:
Advances in Multifunctional Materials and Systems II
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11417e2f3fe6257539b2698826c739c2
https://doi.org/10.1002/9781118771402.ch13
https://doi.org/10.1002/9781118771402.ch13
Autor:
Chang-Hsien Lin, Chi-Ming Wu, Jie-Yi Yao, Chien-Ting Wu, Chi-Hui Yang, Shih Hsiung Wu, Bo-Yuan Chen, Qiong-Zi Hsu, Yi-Ying Ho, Mei Ling Kuo, Cheng-San Wu, Cho-Lun Hsu, Fu-Liang Yang, Yi-Ling Shen, A. Liu, Chenming Hu, Tong-Huan Chou, Dong-Yen Lai, ChiaHua Ho, Chun-Chi Chen, Min-Cheng Chen, Yu-Sheng Lai, Fu-Kuo Hsueh, Chia-Yi Lin, Hung-Min Chen, Chuan Feng Shih, Wen-Cheng Chiu, Wen-Fa Wu, Kun-Lin Lin, Szu-Hung Chen, Shou-Ji Chen, Kent Liu, Mei-Yi Lee, Ching-Tai Hsu
Publikováno v:
2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
This is the first report of 0 eV or negative Schottky barrier height for electrons down to 100 K, even on lightly doped Si. It is achieved by energy barrier engineering with Yb doping at NiSi/Si interface. Ideal unity rectification ratio and reasonab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a780770d9d68ae6aaf0c4578ca54f206
https://doi.org/10.1109/vlsi-tsa.2013.6545608
https://doi.org/10.1109/vlsi-tsa.2013.6545608
Autor:
Tong-Huan Chou, Cho-Lun Hsu, Chung-Hsuan Wang, Wen-Cheng Chiu, Ivy Yang, Fu-Liang Yang, Chenming Hu, Tung-Yen Lai, ChiaHua Ho, Yu-Jun Chou
Publikováno v:
2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS).
The highest reported sensitivity (35%) of DNA sieving by entropic trapping has been achieved with a low operation voltage of 8V, and short time of 6 minutes. Wafer scale fabrication of 3D artificial nano-channel matrices is based on proven NEMS, MEMS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b895c6f69e7de021106461b1d5ca305
https://doi.org/10.1109/memsys.2013.6474389
https://doi.org/10.1109/memsys.2013.6474389
Autor:
Hsin-Hau Huang, Chenming Hu, ChiaHua Ho, Cheng-San Wu, Mei-Yi Lee, Kuang-Hao Chiang, Ivy Yang, Min-Cheng Chen, Tong-Huan Chou, Yong-Der Yao, Wen-Cheng Chiu, Tung-Yen Lai, Fu-Liang Yang, Ming-Taou Lee, Cho-Lun Hsu
Publikováno v:
2012 International Electron Devices Meeting.
A 3D stackable and bidirectional Threshold Vacuum Switching (TVS) selector using the same WO x material as the RRAM element is reported. It provides the highest reported current density of >108 A/cm2 and the highest selectivity of >105. Stress test a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28f94c51e6c3c2fa670af4745532adef
https://doi.org/10.1109/iedm.2012.6478968
https://doi.org/10.1109/iedm.2012.6478968
Autor:
Jui-Min Liu, Hsuen-Li Chen, Wen-Cheng Chiu, Fu-Hsiang Ko, Yung-Bin Lin, Yu-Sheng Lai, ChiaHua Ho, Mei-Yi Li, Szu Ching Liu, Meng-Huang Gu, Mao-Qugn Wei, Cho-Lun Hsu, C. C. Chen, Tai-Ping Sun
Publikováno v:
2012 IEEE Sensors.
Based on novel design of moveable magnet between two mutually inimical magnetic forces without strict fabrication, for the first time, we demonstrate successfully a producible power generator with significant efficiency enhancement at broadband frequ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79df00f7de68e8b5582c69f60a12a689
https://doi.org/10.1109/icsens.2012.6411367
https://doi.org/10.1109/icsens.2012.6411367
Autor:
Jan-Tsai Liu, Fu-Liang Yang, ChiaHua Ho, Chenming Hu, Cheng-San Wu, Cho-Lun Hsu, Chun-Chi Chen, Chien-Chao Huang
Publikováno v:
2010 International Electron Devices Meeting.
Record 9nm half-pitch functional Transition-Metal-Oxide based Resistive Random Access Memory (TMORRAM) cell and the lowest reported 1µA programming current (I prog , both Set and Reset) have been achieved with thermally oxidized sub-stoichiometric W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fd091ef2b9acc2f6a8d283e515b63b2
https://doi.org/10.1109/iedm.2010.5703389
https://doi.org/10.1109/iedm.2010.5703389
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
This work first theoretically optimize the amorphous (a-Si:H) and the microcrystalline (μc-Si:H) devices characteristics, and then perform studies for micromorph tandem solar cells. The studies calculated by AMPS-1D show that the TCO work function h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::398b8984a074e28950f60a7360a5c2c3
https://doi.org/10.1109/pvsc.2010.5615842
https://doi.org/10.1109/pvsc.2010.5615842