Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Cho-Han Fan"'
Autor:
Cho-Han Fan, 范卓涵
100
An uniform titanium oxide film was grown on indium tin oxide/glass substrate with the aqueous solutions of ammonium hexafluoro-titanate and boric acid. The as-deposition titanium oxide film shows good electrochromic property because of fluor
An uniform titanium oxide film was grown on indium tin oxide/glass substrate with the aqueous solutions of ammonium hexafluoro-titanate and boric acid. The as-deposition titanium oxide film shows good electrochromic property because of fluor
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/48561656296350551733
Autor:
Cho-Han Fan, 范卓涵
93
The electrochromic materials are capable of changing their optical properties (transmittance and/or reflectance) under applied electric potentials; when that potential is stopped or it goes on reverse, these materials keep or return to its or
The electrochromic materials are capable of changing their optical properties (transmittance and/or reflectance) under applied electric potentials; when that potential is stopped or it goes on reverse, these materials keep or return to its or
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/05411910829193467992
Publikováno v:
Applied Mechanics and Materials. :252-255
ZnO nanotips were synthesized on a sputtered ZnO buffer layer/ITO/glass by aqueous solution deposition with precursors of zinc nitrate and ammonia. The density of ZnO nanotips can be controlled by the thickness of sputtered ZnO buffer layer. The aver
Autor:
Ming-Kwei Lee, Cho-Han Fan
Publikováno v:
physica status solidi (a). 209:702-707
The growth of nickel oxide film grown on indium–tin oxide/glass substrate by liquid phase deposition is enhanced under ultraviolet photo-irradiation was studied. α-Ni(OH)2 dominates the composition of as-grown NiO film. After thermal treatment at
Publikováno v:
IEEE Photonics Technology Letters. 20:1293-1295
Silicon oxide (SiO2) hemispherical microlens with the density of 8.2 times 108 cm-2 has been formed on a sapphire substrate of gallium nitride (GaN) light-emitting diode (LED) by liquid phase deposition to enhance the light extraction efficiency. For
Autor:
Hung Chang Lee, Cho Han Fan, Tsung Hsiang Shih, Ming Kwei Lee, Chen Lia Ho, Chih Feng Yen, Hwai Fu Tu
Publikováno v:
Key Engineering Materials. :232-234
The high Dit is the major problem of III-V compound semiconductor MOSFET, which causes the pinning of the surface Fermi level near the middle of the energy gap. The GaAs with (NH4)2Sx treatment (S-GaAs) can remove the native oxides on GaAs and preven
Publikováno v:
Journal of The Electrochemical Society. 158:D511
Autor:
Ming-Kwei Lee, Cho-Han Fan
Publikováno v:
Journal of The Electrochemical Society. 156:D395
Uniform nickel oxide film is grown on a conducting glass substrate with an aqueous solution of saturated NiF 2· 4H 2 O and H 3 BO 3 -The quality of NiO is improved after thermal annealing at 300°C in air from the decrease in oxygen vacancy and bett
Publikováno v:
Journal of The Electrochemical Society; 2011, Vol. 158 Issue 8, pD511-D514, 4p