Zobrazeno 1 - 10
of 919
pro vyhledávání: '"Cho, Kyeongjae"'
Autor:
Durham, Daniel B, Noor, Manifa, Aabrar, Khandker Akif, Liu, Yuzi, Datta, Suman, Cho, Kyeongjae, Guha, Supratik, Phatak, Charudatta
In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing such as oxygen vacancy formation and interfacial reactions appear to strongly affect device performance. However, the nanoscale structure, chemistry, and
Externí odkaz:
http://arxiv.org/abs/2405.11653
Autor:
Kim, Ki Seok, Seo, Seunghwan, Kwon, Junyoung, Lee, Doyoon, Kim, Changhyun, Ryu, Jung-El, Kim, Jekyung, Song, Min-Kyu, Suh, Jun Min, Jung, Hang-Gyo, Jo, Youhwan, Ahn, Hogeun, Lee, Sangho, Cho, Kyeongjae, Jeon, Jongwook, Seol, Minsu, Park, Jin-Hong, Kim, Sang Won, Kim, Jeehwan
The demand for the three-dimensional (3D) integration of electronic components is on a steady rise. The through-silicon-via (TSV) technique emerges as the only viable method for integrating single-crystalline device components in a 3D format, despite
Externí odkaz:
http://arxiv.org/abs/2312.03206
Autor:
Hu, Yaoqiao, Cho, Kyeongjae
Publikováno v:
Journal of Applied Physics; 7/7/2024, Vol. 136 Issue 1, p1-12, 12p
Interplay between the topological surface states and bulk states gives rise to diverse exotic transport phenomena in topological materials. The recently proposed Weyl orbit in topological semimetals in the presence of magnetic field is a remarkable e
Externí odkaz:
http://arxiv.org/abs/2206.02253
Autor:
Lin, Zehao, Si, Mengwei, Askarpour, Vahid, Niu, Chang, Charnas, Adam, Shang, Zhongxia, Zhang, Yizhi, Hu, Yaoqiao, Zhang, Zhuocheng, Liao, Pai-Ying, Cho, Kyeongjae, Wang, Haiyan, Lundstrom, Mark, Maassen, Jesse, Ye, Peide D.
High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate an In2O3 tr
Externí odkaz:
http://arxiv.org/abs/2205.00357
Autor:
Si, Mengwei, Hu, Yaoqiao, Lin, Zehao, Sun, Xing, Charnas, Adam, Zheng, Dongqi, Lyu, Xiao, Wang, Haiyan, Cho, Kyeongjae, Ye, Peide D.
In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to be critical on the materials and electron transport of In2O3. Controll
Externí odkaz:
http://arxiv.org/abs/2012.12433
Autor:
Waters, Dacen, Nie, Yifan, Lüpke, Felix, Pan, Yi, Fölsch, Stefan, Lin, Yu-Chuan, Jariwala, Bhakti, Zhang, Kehao, Wang, Chong, Lv, Hongyan, Cho, Kyeongjae, Xiao, Di, Robinson, Joshua A., Feenstra, Randall M.
It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment ($\theta=0^\circ$), associated with flat bands in the Brillouin zone of the moir\'e patter
Externí odkaz:
http://arxiv.org/abs/2004.07851
Publikováno v:
Phys. Chem. Chem. Phys. 22, 8616 (2020)
To investigate inelastic electron scattering, which is ubiquitous in various fields of study, we carry out ab initio study of the real-time dynamics of a one-dimensional electron wave packet scattered by a hydrogen atom using different methods: the e
Externí odkaz:
http://arxiv.org/abs/2004.01802
Akademický článek
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Publikováno v:
Phys. Rev. Materials 3, 064801 (2019)
Edge-contacted superconductor-graphene-superconductor Josephson junction have been utilized to realize topological superconductivity, which have shown superconducting signatures in the quantum Hall regime. We perform the first-principles calculations
Externí odkaz:
http://arxiv.org/abs/1905.10465