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Concealable physical unclonable function generation and an in-memory encryption machine using vertical self-rectifying memristors.

Autor: Cho, Jea Min, Kim, Seung Soo, Park, Tae Won, Shin, Dong Hoon, Kim, Yeong Rok, Park, Hyung Jun, Kim, Dong Yun, Lee, Soo Hyung, Park, Taegyun, Hwang, Cheol Seong

Publikováno v: Nanoscale Horizons; Jan2025, Vol. 10 Issue 1, p113-123, 11p

Enhancing Uniformity, Read Voltage Margin, and Retention in Three-Dimensional and Self-Rectifying Vertical Pt/Ta 2 O 5 /Al 2 O 3 /TiN Memristors.

Autor: Park TW; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea., Moon J; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea., Shin DH; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea., Kim HJ; Department of Materials Science and Engineering, Myongji University, Yongin 17058, Korea., Kim SS; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea., Cho JM; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea., Park H; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea., Woo KS; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea., Kim DY; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea., Cheong S; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea., Song H; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea., Shin JH; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea., Lee SH; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea., Ghenzi N; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.; Universidad de Avellaneda UNDAV and Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Buenos Aires B1870, Argentina., Hwang CS; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Nov 27; Vol. 16 (47), pp. 65046-65057. Date of Electronic Publication: 2024 Nov 12.