Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Chloe Yong"'
Autor:
Bianzhu Fu, Chloe Yong, Baofu Zhu, Shayan Byrappa, Dongil Choi, Hsien-Ching Lo, Shashidhar Shintri, Venkat Kolagunta
Publikováno v:
Materials Science in Semiconductor Processing. 82:9-13
In this study, the effects of high in-situ boron (B) doping in embedded source/drain (S/D) silicon germanium (SiGe) stressor of p-channel Fin Field Effect Transistors (FinFETs) in a 14 nm technology node were investigated. The device results were cor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61710a790ffb1323976688078a916939
https://doi.org/10.1016/j.mssp.2018.03.007
https://doi.org/10.1016/j.mssp.2018.03.007
Autor:
Xiaoli He, Shimpei Yamaguchi, Owen Hu, Zeynel Bayindir, Chloe Yong, Srikanth Samavedam, Hyuck Soo Yang, Dong Kyun Sohn, Suresh Uppal, Manoj Joshi, Purushothaman Srinivasan, Dongil Choi
Publikováno v:
Microelectronics Reliability. 72:80-84
In this work, we investigated the effect of so-called WF (Work Function) setting anneal (high temperature annealing on TiN/HfO 2 stack) on gate stack properties. It was found that intermixed layer created in-between TiN and HfO 2 during WF setting an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9457a506b54889f3e120aa462ed7c14
https://doi.org/10.1016/j.microrel.2017.04.004
https://doi.org/10.1016/j.microrel.2017.04.004
Autor:
Suresh Uppal, Talapady Srivatsa Bhat, Shimpei Yamaguchi, Hui Zhan, Xiaobo Chen, Jianghu Yan, Shashidhar Shintri, Suresh Regonda, Yong Jun Shi, Srikanth Samavedam, Qi Yi, Hsien-Ching Lo, Yan Ping Shen, Dongil Choi, Owen Hu, Manoj Joshi, Jianwei Peng, Chloe Yong, Hong Wei, Baofu Zhu
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:N137-N141
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39395ed3644bd0dbf5ce4571033e3367
https://doi.org/10.1149/2.0011709jss
https://doi.org/10.1149/2.0011709jss
Autor:
Seong Yeol Mun, Hong Yu, J. Versaggi, H. Wei, Alina Vinslava, C. Kyono, Jianwei Peng, Yue Hu, Hui Zhan, Xiaoli He, W.H. Chen, Yanzhen Wang, Baofu Zhu, Mitsuhiro Togo, Qi Yi, X. Zhang, M. Mohan, E. Lavigne, Owen Hu, Srikanth Samavedam, X. Dou, Jae Gon Lee, Dongil Choi, A. Sirman, Jinping Liu, D. K. Sohn, D. Kang, Ashish Kumar Jha, C. Gaire, Shi Yongjun, Zang Hui, Shen Yanping, Hsien-Ching Lo, Chloe Yong, X. Wan, Pei Zhao, D. Zhou
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
We present a state-of-art 12LP FinFET technology with PPA (Performance, Power, and Area) improvement over 14LPP. 12LP enables >10% area reduction including a 7.5T library and 16% power reduction at fixed frequency or a 15% performance improvement at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23ed10354d4b7d67c3a786d4a647199d
https://doi.org/10.1109/vlsit.2018.8510632
https://doi.org/10.1109/vlsit.2018.8510632
Autor:
Bingwu Liu, Manoj Joshi, X. Zhang, Shimpei Yamaguchi, Chloe Yong, Bianzhu Fu, Dina H. Triyoso, Suresh Uppal, Srikanth Samavedam, Xiaoli He
Publikováno v:
ECS Meeting Abstracts. :862-862
In CMOS manufacturing industry, device threshold voltage (Vt) stability is a pre-requisite for volume manufacturing. Device architectural elements, process parameters and room temperature aging (Q-time) are the main source of Vt instability. In FinFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dfb8e1c245de7f834cb637e7897683f1
https://doi.org/10.1149/ma2017-02/14/862
https://doi.org/10.1149/ma2017-02/14/862
Autor:
Suresh Regonda, Shen Yanping, Owen Hu, Pei Zhao, Jianwei Peng, Hsien-Ching Lo, Xinyuan Dou, Qi Yi, Hong Yu, Rick Carter, Manoj Joshi, Chloe Yong, Srikanth Samavedam, Charlotte Adams, Hui Zhan, Jianghu Yan
Publikováno v:
Semiconductor Science and Technology. 32:094004
Epitaxy growth loading effect—the growth rate difference between device macros due to their local open ratio difference—is an important consideration for device design and thus process optimization. A poor loading process leads to device performa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f9ca9a15bae6801b0def1ca29014947
https://doi.org/10.1088/1361-6641/aa7d3f
https://doi.org/10.1088/1361-6641/aa7d3f
Autor:
Hsien-Ching Lo, Jianwei Peng, Chloe Yong, Suresh Uppal, Yi Qi, Hui Zhan, Yan Ping Shen, Xiaobo Chen, Jianghu Yan, Baofu Zhu, Shashidhar Shintri, Shimpei Yamaguchi, Talapady Bhat, Wei Hong, Yong Jun Shi, Regonda, Suresh, Dongil Choi, Owen Hu, Manoj Joshi, Samavedam, Srikanth
Publikováno v:
ECS Journal of Solid State Science & Technology; 2017, Vol. 6 Issue 8, pN137-N141, 5p
Autor:
Jianwei Peng, Yi Qi, Hsien-Ching Lo, Pei Zhao, Chloe Yong, Jianghu Yan, Xinyuan Dou, Hui Zhan, Yanping Shen, Suresh Regonda, Owen Hu, Hong Yu, Manoj Joshi, Charlotte Adams, Rick Carter, Srikanth Samavedam
Publikováno v:
Semiconductor Science & Technology; Sep2017, Vol. 32 Issue 9, p1-1, 1p