Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Chizh, K. V."'
Publikováno v:
Journal of Physics: Conference Series 816(1), 012011 (2017)
We propose a way of formation of thin bilayer Pt$_3$Si/Pt$_2$Si films at room temperature on poly-Si substrates by Pt magnetron sputtering and wet etching, obtain such film, investigate its structure and phase composition and estimate the thickness o
Externí odkaz:
http://arxiv.org/abs/1607.05191
Autor:
Yuryev, V. A., Chizh, K. V., Chapnin, V. A., Mironov, S. A., Dubkov, V. P., Uvarov, O. V., Kalinushkin, V. P., Senkov, V. M., Nalivaiko, O. Y., Novikau, A. G., Gaiduk, P. I.
Publikováno v:
J. Appl. Phys. 117, 204502 (2015)
Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide
Externí odkaz:
http://arxiv.org/abs/1503.05700
Autor:
Touryanski, A. G., Senkov, V. M., Gizha, S. S., Arapkina, L. V., Chapnin, V. A., Chizh, K. V., Kalinushkin, V. P., Storozhevykh, M. S., Uvarov, O. V., Yuryev, V. A.
Publikováno v:
Proc. 21th Int. Symp. "Nanostructures: Physics and Technology", Saint Petersburg, Russia, June 24-28, 2013; Academic University Publishing, St. Petersburg, Russia, 2013, pp. 166-167
Application of the two-wavelength X-ray reflectometry to exploration of Ge/Si(001) hereostructures with dense chains of stacked Ge quantum dots is presented
Comment: 21st Int. Symp. "Nanostructures: Physics and Technology"; Saint Petersburg, Rus
Comment: 21st Int. Symp. "Nanostructures: Physics and Technology"; Saint Petersburg, Rus
Externí odkaz:
http://arxiv.org/abs/1304.0955
Autor:
Chizh, K. V., Chapnin, V. A., Kalinushkin, V. P., Resnik, V. Ya., Storozhevykh, M. S., Yuryev, V. A.
Publikováno v:
Nanoscale Research Letters 2013, 8:177 (URL: http://www.nanoscalereslett.com/content/8/1/177)
Nickel silicide Schottky diodes formed on polycrystalline Si films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays. Structure and composition of nickel silicide/polycrystalline silicon films synthesized
Externí odkaz:
http://arxiv.org/abs/1301.7010
Autor:
Yuryev, V. A., Arapkina, L. V., Storozhevykh, M. S., Chapnin, V. A., Chizh, K. V., Uvarov, O. V., Kalinushkin, V. P., Zhukova, E. S., Prokhorov, A. S., Spektor, I. E., Gorshunov, B. P.
Publikováno v:
Nanoscale Research Letters 2012, 7:414
Issues of Ge hut array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM studies of multilayer Ge/Si heterostructures
Externí odkaz:
http://arxiv.org/abs/1204.2509
Publikováno v:
Proc. 20th Int. Symp. "Nanostructures: Physics and Technology", Nizhni Novgorod, Russia, June 24-30, 2012 (2012) pp. 119-120
This communication covers investigation of the structural properties of surfaces of Si epitaxial layers deposited on different Si(001) vicinal substrates. We have shown processes of generation and growth of surface defects to depend on tilt direction
Externí odkaz:
http://arxiv.org/abs/1204.1297
Autor:
Yuryev, V. A., Arapkina, L. V., Storozhevykh, M. S., Chapnin, V. A., Chizh, K. V., Uvarov, O. V., Kalinushkin, V. P., Zhukova, E. S., Prokhorov, A. S., Spektor, I. E., Gorshunov, B. P.
Publikováno v:
Proc. 20th Int. Symp. "Nanostructures: Physics and Technology", Nizhni Novgorod, Russia, June 24-30, 2012; Academic University Publishing, St. Petersburg, Russia, 2012, pp. 209-210
Issues of Ge hut cluster nucleation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM investigations of Ge/Si heterostructures a
Externí odkaz:
http://arxiv.org/abs/1203.5631
Publikováno v:
J. Appl. Phys. 112, 014311 (2012)
Structural properties of the clean Si(001) surface obtained as a result of low-temperature (470--650C) pre-growth annealings of silicon wafers in a molecular-beam epitaxy chamber have been investigated. To decrease the cleaning temperature, a silicon
Externí odkaz:
http://arxiv.org/abs/1202.6224
Autor:
Zhukova, E. S., Gorshunov, B. P., Yuryev, V. A., Arapkina, L. V., Chizh, K. V., Chapnin, V. A., Kalinushkin, V. P., Prokhorov, A. S., Mikhailova, G. N.
Publikováno v:
JETP Letters, 2010, Vol. 92, No. 12, pp. 793-798
The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of 0.3-1.2 THz at
Externí odkaz:
http://arxiv.org/abs/1101.3527
Autor:
Kucherenko, I. V., Vinogradov, V. S., Mel'nik, N. N., Arapkina, L. V., Chapnin, V. A., Chizh, K. V., Yuryev, V. A.
Publikováno v:
Physics of the Solid State, 2008, Vol. 50, No. 10, pp. 1970-1977; Fizika Tverdogo Tela, 2008, Vol. 50, No. 10, pp. 1888-1894
The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy. It is rev
Externí odkaz:
http://arxiv.org/abs/1010.1927