Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Chiyui Ahn"'
Autor:
Scott W. Fong, Kenneth E. Goodson, Aditya Sood, H.-S. Philip Wong, Eric Pop, Chiyui Ahn, Yong-Sung Kim, Christopher M. Neumann, Seunghyun Lee, Mehdi Asheghi
Publikováno v:
Nano Letters. 15:6809-6814
Phase-change memory (PCM) is an important class of data storage, yet lowering the programming current of individual devices is known to be a significant challenge. Here we improve the energy-efficiency of PCM by placing a graphene layer at the interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::401304b368ea08a810883767f3fd078e
https://doi.org/10.1021/acs.nanolett.5b02661
https://doi.org/10.1021/acs.nanolett.5b02661
Autor:
H.-S. Philip Wong, Zizhen Jiang, Hong-Yu Chen, Chi-Shuen Lee, Jiale Liang, Luckshitha Suriyasena Liyanage, Chiyui Ahn
Publikováno v:
IEEE Transactions on Electron Devices. 62:2197-2204
A novel one-transistor-n-resistors (1TnR) array architecture is demonstrated as a cost-effective solution to the sneak path problem in large-scale cross-point memory arrays. In a 1TnR array, a single transistor (1T) with a 1D channel effectively cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::390f581b830b2776cc770c55489d0247
https://doi.org/10.1109/ted.2015.2433956
https://doi.org/10.1109/ted.2015.2433956
Autor:
Scott W. Fong, Ji Cao, Shengjun Qin, Chiyui Ahn, H.-S. Philip Wong, Hong-Yu Chen, Xin Zheng, Ziwen Wang, Yoshio Nishi, Zizhen Jiang
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
Microsecond transient thermal disturbance (TD) on the conduction and switching of HfOX-based resistive random access memory (RRAM) is investigated using a micro thermal stage (MTS). Temperature-dependent measurement (298–1134 K) induced from MTS is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::806386203304d72bc0b172caec6b7d36
https://doi.org/10.1109/iedm.2016.7838465
https://doi.org/10.1109/iedm.2016.7838465
Autor:
Susmit Singha Roy, Alvin Tang, Ling Li, Xiangyu Chen, Michael S. Arnold, Ching-Hua Wang, Seunghyun Lee, H.-S. Philip Wong, Chiyui Ahn, Ji Cao
Publikováno v:
ACS Nano
A different mechanism was found for Cu transport through multi-transferred single-layer graphene serving as diffusion barriers on the basis of time-dependent dielectric breakdown tests. Vertical and lateral transport of Cu dominates at different stre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c67810265e6e12019fa9d1c3f3c5b150
https://pubmed.ncbi.nlm.nih.gov/26222951
https://pubmed.ncbi.nlm.nih.gov/26222951
Autor:
Chiyui Ahn, Mincheol Shin
Publikováno v:
IEEE Transactions On Nanotechnology. 5:278-283
The device characteristics of the nanoscale Schottky-barrier tunnel transistor (SBTT) are investigated by solving the self-consistent two-dimensional Poisson-Schrodinger equations and treating the ballistic transport with the nonequilibrium Green's f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95cc6b07d2b03e0024adc58f3da2968b
https://doi.org/10.1109/tnano.2006.874042
https://doi.org/10.1109/tnano.2006.874042
Autor:
Han-Bo-Ram Lee, Kwanpyo Kim, Zhenan Bao, Nan Liu, Changhyun Pang, Myung-Gil Kim, Richard W. Johnson, Chiyui Ahn, Jukka T. Tanskanen, Stacey F. Bent
Publikováno v:
Nature Communications. 5
One-dimensional defects in graphene have strong influence on its physical properties, such as electrical charge transport and mechanical strength. With enhanced chemical reactivity, such defects may also allow us to selectively functionalize the mate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::132503149b1b3571375ea213656927a6
https://doi.org/10.1038/ncomms5781
https://doi.org/10.1038/ncomms5781
Autor:
Chiyui Ahn, Zizhen Jiang, Jiale Liang, Hong-Yu Chen, H.-S. Philip Wong, Luckshitha Suriyasena Liyanage, Chi-Shuen Lee
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
Phase-change memory (PCM) cells on a single carbon nanotube field-effect transistor (CNFET) are demonstrated toward the realization of the 1TnR array architecture. The use of CNFET as one-dimensional selector, which exhibits ultra-low leakage ( 10 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::306e85db785e43f4686d9d8ec875b52a
https://doi.org/10.1109/vlsit.2014.6894404
https://doi.org/10.1109/vlsit.2014.6894404
Publikováno v:
Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
The conduction mechanism of HfOx-based RRAM is investigated by analyzing the I–V characteristics of HfOx-based RRAM devices at different temperatures ranging from 350 K down to 40 K. Electrical conduction of RRAM is found to be strongly dependent o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb311a34ae67cfd70ee1e0f343dd5141
https://doi.org/10.1109/vlsi-tsa.2014.6839685
https://doi.org/10.1109/vlsi-tsa.2014.6839685
Autor:
Chiyui Ahn, Ku Youl Jung, Seung-Young Park, Byoung-Chul Min, Kungwon Rhie, Kyung-Ho Shin, Il-Jae Shin, Gyung-Min Choi
Publikováno v:
Journal of nanoscience and nanotechnology. 13(9)
We present a fabrication method for nano-scale magnetic tunnel junctions (MTJs), employing e-beam lithography and lift-off process assisted by the probe tip of atomic force microscope (AFM). It is challenging to fabricate nano-sized MTJs on small sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d68487c0601549f81868a9d2591ba54e
https://pubmed.ncbi.nlm.nih.gov/24205685
https://pubmed.ncbi.nlm.nih.gov/24205685
Autor:
Jürgen Langer, Berthold Ocker, Chiyui Ahn, Wolfram Maass, Kyung-Ho Shin, Il-Jae Shin, Gyung-Min Choi, Byoung-Chul Min
Publikováno v:
10th IEEE International Conference on Nanotechnology.
We illuminate how the tunnel magnetoresistance (TMR) of MgO-based magnetic tunnel junctions (MTJs) is affected by the structure, materials, and fabrication processes. First, we demonstrate a possibility to control detrimental diffusions by separating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e11e1bcebbdd6f2b39c62eec3d7a25be
https://doi.org/10.1109/nano.2010.5697730
https://doi.org/10.1109/nano.2010.5697730