Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Chiyu Zhu"'
Autor:
Anshul Gupta, Jan Willem Maes, Nicolas Jourdan, Chiyu Zhu, Sukanya Datta, Olalla Varela Pedreira, Quoc Toan Le, Dunja Radisic, Nancy Heylen, Antoine Pacco, Shouhua Wang, Moataz Mousa, Young Byun, Felix Seidel, Bart de Wachter, Gayle Murdoch, Zsolt Tokei, Eugenio Dentoni Litta, Naoto Horiguchi
Publikováno v:
2022 IEEE International Interconnect Technology Conference (IITC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b42768f8bdfda564d254b2f1b5c7c83e
https://doi.org/10.1109/iitc52079.2022.9881304
https://doi.org/10.1109/iitc52079.2022.9881304
Autor:
Maryamsadat Hosseini, Davide Tierno, Jan Willem Maes, Chiyu Zhu, Sukanya Datta, Young Byun, Moataz Mousa, Nicolas Jourdan, Eugenio Dentoni Litta, Naoto Horiguchi
Publikováno v:
2022 IEEE International Interconnect Technology Conference (IITC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8de1839fba29e5ed41c7dd1c3a7d7f9
https://doi.org/10.1109/iitc52079.2022.9881322
https://doi.org/10.1109/iitc52079.2022.9881322
Publikováno v:
Diamond and Related Materials. 19:110-113
Nitrogen-doped homoepitaxial diamond films were synthesized for application as low-temperature thermionic electron emitters. Thermionic electron emission measurements were conducted where the emission current was recorded as a function of emitter tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3270fc3eb0ed4e69e12c8f8e53e586bd
https://doi.org/10.1016/j.diamond.2009.09.002
https://doi.org/10.1016/j.diamond.2009.09.002
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32:011203
Vanadium dioxide (VO2) is a narrow band gap material that undergoes a metal-insulator phase transition at ∼343 K with evidence of an electric-field induced transition at T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16287b13971d0d66378d82d26601e7ed
https://doi.org/10.1116/1.4832341
https://doi.org/10.1116/1.4832341
Publikováno v:
Journal of Applied Physics. 112:084105
Vanadium oxide (VO2) is a narrow band gap material (Eg = 0.7 eV) with a thermally induced insulator-metal phase transition at ∼343 K and evidence of an electric field induced transition at T < 343 K. To explore the electronic properties of VO2, a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76c672473050b66c30efcb9313780fc4
https://doi.org/10.1063/1.4761990
https://doi.org/10.1063/1.4761990
Autor:
Chiyu Zhu, Robert J. Nemanich, Sean W. King, Xin Liu, Christopher J. Jezewski, Brianna S. Eller, Tianyin Sun
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30:052203
The first part of this study examined oxide stability and cleaning of Ru surfaces. The surface reactions during H2 plasma exposure of Ru polycrystalline films were studied using x-ray photoelectron spectroscopy (XPS). The ∼2 monolayer native Ru oxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fd23d48693df263b787b650e09de7e8
https://doi.org/10.1116/1.4742906
https://doi.org/10.1116/1.4742906
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30:051807
A gate stack structure with a thin ZnO layer between an oxidized Si(100) surface and an alloyed hafnium and lanthanum oxide (HfO2-La2O3) layer was prepared by plasma enhanced atomic layer deposition at ∼175 °C. High resolution electron microscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::522455d643e844dacd637bcfd6635c1f
https://doi.org/10.1116/1.4752089
https://doi.org/10.1116/1.4752089
Publikováno v:
Journal of Applied Physics. 112:053710
Al2O3 films, HfO2 films, and HfO2/Al2O3 stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08ece832527b821c8204f08a7cf7e225
https://doi.org/10.1063/1.4749268
https://doi.org/10.1063/1.4749268
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 30:01A147
In this work, we investigated the growth of Hf oxide, La oxide, and alloyed Hf–La oxide films using remote-plasma atomic layer deposition at temperatures ranging from ∼80 to ∼250 °C. The relative composition and atomic bonding structure of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::627e9835bf67b0d11aebb49b36726760
https://doi.org/10.1116/1.3665419
https://doi.org/10.1116/1.3665419
Publikováno v:
Applied Physics Letters. 99:202101
This study reports a photoemission threshold of ∼1.5 eV from nitrogen-doped nanocrystalline diamond, which ranks among the lowest photo-threshold of any non-cesiated material. Diamond films on molybdenum substrates have been illuminated with light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42beca3e358fca2e2adbc8c0cc23f24c
https://doi.org/10.1063/1.3658638
https://doi.org/10.1063/1.3658638