Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Chiu-Yueh Liang"'
Autor:
Chiu-yueh Liang, 梁秋月
89
This study is for understanding how teachers, parents and children interpret picture book of “The Giving Tree” written by Shel Silverstein about the theme, character, plot, language and illustration in primary school. After the reading, t
This study is for understanding how teachers, parents and children interpret picture book of “The Giving Tree” written by Shel Silverstein about the theme, character, plot, language and illustration in primary school. After the reading, t
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/37789624783205377677
Autor:
Li-Wei Sung, Xing-Jian Guo, Fei-Chang Hwang, Yi-Tsuo Wu, Wen-Chang Jiang, Chiu-Yueh Liang, Ferng-Jye Lay, Cheng-Zu Wu, Hao-Hsiung Lin, Pai-Yong Wang, Chin-An Chang
Publikováno v:
Journal of Crystal Growth. 225:550-555
InAs quantum dots were formed by depositing monolayers of InAs on GaAs, covered with InGaAs, and flanged with GaAs barriers. This formed a single quantum well in the present study, as grown by molecular-beam epitaxy. Both multiple quantum wells (MQW)
Publikováno v:
Journal of Crystal Growth. 223:92-98
Multiple quantum wells (MQW) and laser-containing InAs quantum dots were grown on GaAs using molecularbeam epitaxy. For the MQW, the wells consisted of monolayers of InAs covered by In0.15Ga0.85As, with the barrier layers being GaAs. The photolumines
Autor:
Chih Ming Lai, Chu-Shou Yang, Gray Lin, R. S. Hsiao, Jenn-Fang Chen, Jim Y. Chi, Tung-Wei Chi, H. Y. Liu, Chiu-Yueh Liang, Jyh-Shyang Wang
Publikováno v:
IEEE Photonics Technology Letters. 17:1590-1592
Continuous large-broad laser gain spectra near 1.3 /spl mu/m are obtained using an active region of electronic vertically coupled (EVC) InAs-GaAs quantum dots (QDs). A wide continuous electroluminescence spectrum, unlike that from conventional uncoup
Autor:
Jenn-Fang Chen, Jim Y. Chi, A. R. Kovsh, Chiu Yueh Liang, Ru Shang Hsiao, Hui Yu Liu, Kun Feng Lin, Jyh Shyang Wang, Li Wei, Nikolay A. Maleev, Chih Ming Lai
Publikováno v:
Japanese Journal of Applied Physics. 43:L1555-L1557
The growth by molecular-beam-epitaxy of high-quality 1.3 µm InGaAsN/GaAs quantum wells (QW) intra-cavity contacted vertical cavity surface emitting lasers (VCSELs) was demonstrated. Low-temperature growth, which suppresses the phase separation signi
Autor:
Jyh-Shyang Wang, Ru-Shang Hsiao, Jenn-Fang Chen, Chu-Shou Yang, G. Lin, Chiu-Yueh Liang, Chih-Ming Lai, Hui-Yu Liu, Tung-Wei Chi, J.-Y. Chi
Publikováno v:
IEEE Photonics Technology Letters; Aug2005, Vol. 17 Issue 8, p1590-1592, 3p